EUV光刻，新里程碑

Core Insights - Imec has made significant advancements in single-print high numerical aperture EUV lithography technology, showcasing a 20nm pitch line structure with a critical dimension (CD) of 13nm, which is crucial for advanced semiconductor manufacturing [3][8][10] - The results achieved by Imec are pivotal for meeting the goals outlined in the European Chips Act, particularly concerning technology nodes below 2nm [3][11] Summary by Sections - Technological Achievements - Imec demonstrated a 20nm pitch line structure with a 13nm T2T CD and a local critical dimension uniformity (LCDU) of 3nm, marking a significant milestone in the industry [9][10] - The results were obtained through the optimization of metal oxide photoresists and the underlying illumination pupil shape and mask selection [9][10] - Collaboration and Ecosystem - The advancements are a result of collaboration with ASML and the establishment of the ASML-Imec high numerical aperture EUV joint laboratory in Veldhoven, which has fostered a robust ecosystem for lithography technology development [11] - The partnership emphasizes the importance of collaboration among leading chip manufacturers, equipment suppliers, and material providers to enhance high numerical aperture EUV lithography capabilities [11] - Future Directions - Imec is working towards reducing the end-to-end distance to 13nm and below while maintaining functional interconnects, with promising results already seen at the 11nm process node [5][10] - The laboratory is also exploring alternative metallization schemes for below 20nm pitches, demonstrating the compatibility of ruthenium (Ru) direct metal etching with single-exposure high NA EUV lithography [10][11]