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俄罗斯公布EUV光刻机路线图

Core Viewpoint - The article discusses a long-term roadmap for Russia's development of domestic extreme ultraviolet (EUV) lithography tools, aiming for self-sufficiency in chip production by 2037, while highlighting the challenges and potential benefits of this initiative [1][6]. Summary by Sections Roadmap Overview - The roadmap includes three main phases: 1. The first system, planned for 2026-2028, will support 40nm technology with a throughput of over 5 wafers per hour [2]. 2. The second phase (2029-2032) introduces a 28nm scanner with a potential to support 14nm, achieving a throughput of over 50 wafers per hour [2]. 3. The final system (2033-2036) aims for sub-10nm production with a throughput exceeding 100 wafers per hour [2]. Technical Innovations - The proposed EUV system avoids replicating ASML's architecture, opting for a different technology involving mixed solid-state lasers and xenon-based light sources, which could reduce maintenance needs [1][2]. - The tools are expected to support a resolution range from 65nm to 9nm, aligning with the requirements of many critical layers in the 2025-2027 timeframe [2]. Potential Benefits and Challenges - Developers claim that using EUV for older nodes may offer unexpected advantages, although the complexities associated with the 11.2nm wavelength laser have not been fully addressed [3]. - The feasibility of the entire plan remains uncertain, as it spans the entire industry and has not been validated [6]. Market Implications - The tools are designed not for large-scale fabs but to enable smaller foundries to adopt low-cost solutions, potentially attracting international clients currently excluded from the ASML ecosystem [6].