俄罗斯公布EUV光刻机路线图

Core Viewpoint - The Russian Academy of Sciences' roadmap for domestic 11.2 nm wavelength EUV lithography tools aims to establish an independent semiconductor manufacturing capability, showcasing a commitment to innovation despite significant technical and commercial challenges [1][2]. Group 1: Roadmap Overview - The roadmap, proposed by Nikolai Chkhalo, spans from 2026 to 2037, focusing on differentiated design to avoid the complexities and high costs associated with ASML's technology [2]. - The project is divided into three main phases: 1. Phase 1 (2026-2028): Launch of lithography machines supporting 40 nm processes with a throughput of over 5 wafers per hour [5]. 2. Phase 2 (2029-2032): Introduction of machines for 28 nm (downward compatible to 14 nm) with a throughput exceeding 50 wafers per hour [6]. 3. Phase 3 (2033-2036): Development of machines for sub-10 nm processes, achieving a throughput of over 100 wafers per hour [6]. Group 2: Technical Innovations - The Russian EUV lithography technology diverges from the mainstream 13.5 nm wavelength, utilizing a hybrid solid-state laser and xenon plasma light source, along with 11.2 nm wavelength mirrors made of ruthenium and beryllium [6][8]. - This approach significantly reduces contamination of optical components, thereby lowering maintenance requirements compared to ASML's tin droplet method [8]. Group 3: Challenges and Comparisons - The feasibility of the Russian EUV lithography roadmap faces challenges, including the need for a complete ecosystem of optical components and resist materials tailored for the new wavelength [7]. - While the proposed machines aim for high throughput, they are designed for smaller foundries rather than competing with ASML's high-capacity systems [8][9]. - The Russian strategy reflects a differentiated competitive approach, contrasting with China's adherence to mainstream technology paths, aiming for self-sufficiency in chip production [9].