存储巨头，抢攻9nm！

Group 1 - Micron is evaluating two potential roadmap paths for DRAM technology, one following the traditional route to 10.1nm and another ambitious plan to skip directly to 9nm [1] - The current commercial node, 1c, has a line width of approximately 11.2nm, and the ability to reduce the 1d node's line width will determine the feasibility of skipping the 1e node [1] - Competitors Samsung and SK Hynix are also planning to transition directly to 9nm DRAM, prompting Micron to adjust its roadmap to remain competitive [1] Group 2 - 3D DRAM is considered the next breakthrough in storage architecture, but mass production is unlikely before 2033 or 2034 due to delays in achieving the necessary stacking layers [2] - Experts estimate that at least 90 to 100 layers will be needed for 3D DRAM to be commercially viable, while current prototypes are limited to 16 to 24 layers [2] - Chip manufacturers are investing heavily in 4F² and 3D DRAM research and development, but the transition will be gradual due to high technical barriers and manufacturing costs [2] Group 3 - Micron is investing $100 billion in a new wafer fabrication plant in New York, which is the largest private investment in the state's history [3] - The project is expected to create over 50,000 jobs in the next 20 years, with approximately 9,000 direct jobs, and aims to account for about 25% of U.S. semiconductor production [3] - The approval of a new underground power line marks the first phase of construction, aligning with Micron's strategic investment agreement with New York state [3]