SiC大厂，获36亿补贴

Core Points - The European Commission has approved a €450 million (approximately 3.6 billion RMB) aid plan to support Onsemi's construction of a silicon carbide (SiC) power semiconductor manufacturing facility in Rožnov pod Radhoštěm, Czech Republic, aiming for commercial production by 2027 [1][3] - This project will establish the first fully integrated SiC production line in the EU, significantly boosting the region's SiC capacity and addressing the local procurement needs in the automotive, renewable energy, and industrial power markets [1][3] Financial and Investment Details - The €450 million grant will support Onsemi's total investment of €1.64 billion in the new wafer fab [3] - The facility will produce next-generation SiC devices, which are increasingly important in electric vehicles, fast chargers, solar inverters, and industrial power systems, with European demand currently exceeding local supply [3] Strategic Importance - The project is expected to enhance the resilience of the European semiconductor value chain, aligning with the core objectives of the EU's Chip Act [3] - Onsemi has committed to several conditions, including contributing to the development of next-generation 200mm SiC technology and prioritizing orders in case of supply shortages as per the EU Chip Act [3] Approval Rationale - The European Commission approved the aid under Article 107(3)(c) of the Treaty on the Functioning of the European Union, determining that the aid is necessary, proportionate, and has an incentive effect [5] - The project is seen as strategically important for reducing reliance on imports and enhancing the supply of critical power electronic products in Europe [5]