英特尔豪赌下一代晶体管

Core Viewpoint - The collaboration between Intel and imec marks a significant step towards the practical application of two-dimensional field-effect transistors (2DFET) by demonstrating a process compatible with 300mm wafers, indicating progress in integrating two-dimensional materials into large-scale semiconductor manufacturing [1][2][3] Group 1: Technological Advancements - Intel and imec have developed a contact and gate stack integration scheme that is compatible with wafer fabrication, addressing the challenge of integrating transition metal dichalcogenides (TMDs) into the manufacturing process without damaging the sensitive channels [2] - The use of high-quality two-dimensional layers, combined with a multi-layer stack of AlOx, HfO₂, and SiO₂, allows for the formation of embedded top contacts that protect the underlying two-dimensional channels from contamination and physical damage [2] Group 2: Industry Implications - The work done by Intel and imec is not expected to lead to immediate product commercialization but is valuable in reducing risks associated with the development and eventual production of chips based on two-dimensional materials [3] - Intel's strategy positions two-dimensional materials as a future option to be evaluated before silicon reaches its physical limits, aiming to address manufacturing challenges early in the development process [3] Group 3: Long-term Vision - The announcement from Intel's foundry conveys two key messages: the ongoing commitment to long-term technology R&D that will be critical for the semiconductor industry in the coming decades, and the necessity for new transistor concepts to consider manufacturability even in the research phase [3]