三星，超越美光

Group 1 - Samsung Electronics surpassed Micron Technology to reclaim the second position in the high bandwidth memory (HBM) market in Q3, with a market share of 22%, up from 15% in the previous quarter, while Micron's share was 21% [1][3] - SK Hynix maintained the top position in the HBM market with a 57% share, although this was a decrease from 64% in the previous quarter, indicating a weakening of its dominance [3] - In the overall DRAM market, SK Hynix held a 34% share, while Samsung closely followed with 33%, marking a significant recovery for Samsung from 32% in Q2 [3] Group 2 - The DRAM market experienced a 26% growth quarter-over-quarter due to historical price increases and supply shortages caused by production cuts from the three major memory manufacturers [3] - Analysts expect intensified competition in the HBM4 market next year, with Samsung expanding HBM3E production capacity and accelerating the development of next-generation products [4]