Intel(US:INTC) 硬AI·2026-02-11 08:40Core Viewpoint - The article discusses the global debut of Z-Angle Memory (ZAM), a next-generation AI memory technology developed by Intel and SoftBank, which promises lower power consumption, higher capacity, and wider bandwidth compared to traditional DRAM [3][6]. Group 1: ZAM Technology Overview - ZAM utilizes a vertical stacking architecture that addresses long-standing thermal management issues associated with planar stacking designs [3][7]. - Early data indicates that ZAM can reduce power consumption by 40% to 50% and achieve a single-chip capacity of up to 512GB [3][7]. - The prototype of ZAM is expected to be launched in 2027, with full commercialization anticipated by 2030 [3][6]. Group 2: Market Positioning and Strategic Goals - ZAM aims to fill the gap between high bandwidth memory (HBM) and traditional DDR DRAM, providing significantly higher energy efficiency without sacrificing capacity [10][11]. - The technology is designed to overcome the limitations of current high bandwidth memory, which often compromises capacity for higher bandwidth [10][11]. - The collaboration between SoftBank and Intel seeks to address the energy consumption bottlenecks and supply chain challenges faced by current AI applications [11].