Core Insights - Chinese researchers have revealed a physical mechanism that significantly reduces energy consumption in spintronic devices, providing a new principle and design approach for ultra-low power devices [2][3] - The study highlights the limitations of traditional electronic technology as it approaches performance limits, with the "power wall" becoming a bottleneck for technological advancement [2] - The research indicates that the introduction of defects in materials can enhance the efficiency of spintronic devices by increasing the orbital Hall angle and orbital Hall conductivity, thus lowering write current and power consumption [3] Group 1 - The research team from the Ningbo Institute of Materials Technology and Engineering discovered that the non-traditional scaling law of electronic "orbital" properties can convert electronic motion resistance into performance gains [2] - The findings were published online in the journal Nature Materials on August 15, indicating a significant breakthrough in overcoming the performance bottlenecks of traditional spintronics [2] - The study suggests that the new generation of spintronic devices theoretically possesses advantages such as high speed and non-volatility, making them potential technologies to break through the "power wall" [2] Group 2 - The research demonstrates that crystal defects, previously seen as obstacles, can act as "fuel stations" when interacting with the orbital angular momentum of electrons, leading to stronger detected orbital effects [3] - By actively introducing defects, the study shows that both the orbital Hall angle and orbital Hall conductivity can be increased simultaneously, breaking the limitations of traditional methods [3] - This discovery not only provides a new physical basis for efficient orbital electronics but also offers a fresh design perspective for the entire field of spintronics [3]