Core Insights - The article discusses the 2025 Heterogeneous Integration Frontier Forum held in Ningbo, focusing on advanced technologies and collaboration opportunities in the field of micro-LED and related materials [3][5]. Group 1: Industry Trends and Challenges - The forum attracted leading companies and research institutions to discuss cutting-edge results, technological trends, and key challenges in the industry [3]. - Key challenges in quantum dot applications include achieving high stability and high light conversion efficiency [10]. - The efficiency and transmission distance of UV LED optical communication are currently low, posing significant challenges [12]. Group 2: Technological Innovations - Continuous process optimization aims to reduce extreme thickness to 3-5 micrometers and TTV to less than 0.5 micrometers [8]. - Non-destructive Micro-LED technology can resolve material damage issues and production challenges, with hybrid bonding being the best bridge for semiconductor heterogeneous integration [14]. - GaN Die products with low dislocation density and non-destructive chemical peeling offer significant performance advantages, improving uniformity, brightness, and reliability [19]. Group 3: Material and Process Development - The development of GaN-on-Si epitaxy faces challenges such as low yield from the etching method and lattice mismatch between GaN and silicon [21]. - The ability to redefine MLED panel sizes and reduce seams enhances visual experience, with advancements in panel sizes from 15 inches to 27 inches [17]. - A one-stop capability for optical waveguide post-processing ensures comprehensive control over product quality, including parameters like surface cleanliness and optical performance [16].