Silicon Carbide (SiC) wide bandgap semiconductors

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Axcelis Announces Joint Development Program with GE Aerospace For the Development of High Voltage Superjunction Power Devices
Prnewswire· 2025-08-20 12:00
BEVERLY, Mass., Aug. 20, 2025 /PRNewswire/ -- Axcelis Technologies, Inc. (Nasdaq: ACLS), a leading supplier of enabling ion implantation solutions for the semiconductor industry, announced a Joint Development Program (JDP) with GE Aerospace focused on the development of production-worthy 6.5 to 10kV superjunction power devices. Processes will be developed on Axcelis' Purion XEmax™ high energy implanter, which provides the industry's highest beam currents over the broadest energy range — up to 15MeV. This JD ...