Core Viewpoint - The China Electronic Materials Industry Association has released a group standard for high-purity silicon carbide powder used in crystal growth, marking a significant step in the third-generation semiconductor materials sector in China [1] Group 1: Standard Implementation - The standard, developed by Henan Zhongyi Chuangxin Development Co., in collaboration with domestic research institutions and industry chain enterprises, will officially take effect on November 1 [1] - This standard is the first technical specification in China for silicon carbide powder with a purity level above 6N [1] Group 2: Positive Impacts - Establishing a unified technical specification will enhance the overall technical level of the industry [1] - The standard will reduce verification costs for downstream companies, accelerating the process of domestic substitution [1] - It will strengthen the technological barriers of leading enterprises and optimize the competitive landscape of the industry [1] Group 3: Industry Development - The implementation of the standard is expected to effectively lower technical risks and verification costs in the downstream crystal growth process [1] - It will accelerate the application substitution process of domestic high-purity silicon carbide powder, providing crucial support for the independent and high-quality development of China's third-generation semiconductor industry chain [1]