TORRANCE, Calif., June 24, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, has been awarded the ‘Outstanding Technical Collaboration Award’ from VREMT Energy, a subsidiary of Geely, which specializes in new energy vehicle power batteries, electric drive systems, charging systems and energy storage systems. VREMT and Navitas opened a joint R&D Laboratory to accelerate ...

Next-generation PSU ‘designed for production’ achieves OCP requirements for high-power, high-density server racks, enabled by GaNSafe™ ICs and Gen-3 Fast SiC MOSFETs Navitas Launches Industry-Leading 12kW GaN & SiC Platform, Achieving 97.8% Efficiency for Hyperscale AI Data Centers Next-generation PSU ‘designed for production’ achieves OCP requirements for high-power, high-density server racks, enabled by GaNSafe™ ICs and Gen-3 Fast SiC MOSFETs. TORRANCE, Calif., May 21, 2025 (GLOBE NEWSWIRE) -- Navitas ...

Latest AI data center PSU platform enabled by GaNSafe™, GeneSiC™, and IntelliWeave™ will showcase industry-leading efficiency & power density for hyperscalers Contact Information "The exponential growth of AI computing power poses stringent challenges for data center infrastructure. The debut of our latest AI data center PSU achieves dual breakthroughs in efficiency and power density, demonstrating Navitas' continuous innovation in GaN and SiC technologies and deep understanding of the data center industry" ...

High-power GaNSafe™ & GeneSiC MOSFETs power new levels of energy efficiency, reduce electricity costs, and extend system lifetime. TORRANCE, Calif., April 01, 2025 (GLOBE NEWSWIRE) -- In a release issued on March 17, 2025 by Navitas Semiconductor (Nasdaq: NVTS), please note registered trademarks, CLEAResult certification information, and an updated image have been added and references to the APEC 2025 conference have been removed. The corrected release follows: Navitas Semiconductor (Nasdaq: NVTS), the only ...

以下文章来源于上海永铭电容器 ，作者ymin 上海永铭电容器 . 电容应用 有困难-找永铭 " 在AI服务器迈向更高算力的进程中，电源的高功率与小型化成为关键挑战。2 0 2 4年，纳微推 出GaNS a f e™氮化镓功率芯片和第三代碳化硅MOS FETs，意法半导体推出新型硅光技术 P IC1 0 0、英飞凌推出Co o l S iC™ MOS FET 4 0 0 V，皆为提升AI服务器的电源功率密度。 随着电源功率密度的持续攀升 ，被动元器件需同时满足小型化、大容量、高可靠性的严苛要 求。永铭与各合作伙伴深度配合，致力于为更高功率的AI服务器电源打造高性能电容器解决方 案。 " PART 0 1 永铭与纳微深度配合 协同创新 面对电源系统对核心元器件的小型化设计与超高能量密度提出的双重挑战，永铭持续投入研 发与创新，经过不断的技术探索与突破，最终成功开发出高压牛角型铝电解电容IDC3系列，成功 应用于氮化镓功率芯片领导者纳微发布的 4 . 5 kW、8 . 5 kW高密度AI服务器电源 方案中。 4.5kwAI服务器电源 8.5kwAI服务器电源 PART 0 2 IDC3系列作为永铭专为AI服务器电源 ...