Core Viewpoint - The article discusses Russia's long-term roadmap for developing domestic extreme ultraviolet (EUV) lithography equipment, aiming to enhance its semiconductor manufacturing capabilities while avoiding reliance on traditional EUV technologies [2][6]. Summary by Sections Development Roadmap - The roadmap outlines three main development phases for the EUV lithography equipment: - **Phase 1 (2026-2028)**: Aims to support 40nm process technology with a dual-mirror optical system, achieving a patterning accuracy of 10nm, a maximum exposure field of 3×3 mm, and a throughput of over 5 wafers per hour [3]. - **Phase 2 (2029-2032)**: Plans to introduce a scanning lithography machine supporting 28nm (backward compatible to 14nm), utilizing a four-mirror optical system, improving patterning accuracy to 5nm, a field size of 26×0.5 mm, and a throughput exceeding 50 wafers per hour [3]. - **Phase 3 (2033-2036)**: Targets sub-10nm processes with a six-mirror configuration, achieving a patterning accuracy of 2nm, a maximum exposure field of 26×2 mm, and a throughput of over 100 wafers per hour [3]. Technical Innovations - The proposed EUV system does not replicate ASML's architecture but instead employs a different technology framework, including hybrid solid-state lasers and a xenon plasma-based light source, which reduces maintenance needs and avoids damage to photomasks [2][4]. - The roadmap indicates that the equipment will cover process requirements from 65nm to 9nm, aligning with mainstream critical layer processes expected between 2025 and 2027 [3]. Market Positioning - The development aims to provide a cost-effective solution for smaller foundries, potentially attracting international clients excluded from the ASML ecosystem by offering a clean, efficient, and scalable lithography system without immersion technology or tin-based plasma [6]. - If successfully implemented, the project could enable local production and export of advanced chips at significantly lower capital and operational costs compared to existing solutions [6].