Core Viewpoint - The article discusses the recent angel round financing of Yanchip Microelectronics, a developer of ReRAM storage chips and AI computing chips, highlighting the potential of next-generation non-volatile memory technologies, particularly Resistive Random Access Memory (RRAM) [2][3]. Group 1: Investment and Financing - Yanchip Microelectronics has completed an angel round financing with investors including Baiwei Storage, Kaiyuan Mingxin, Yanyuan Fund, Huayu Science and Technology Innovation Fund, and Linghang New Frontier [2]. Group 2: Next-Generation Memory Technologies - Various next-generation non-volatile memory technologies have emerged, including Ferroelectric RAM (FRAM), Phase Change RAM (PRAM), Magnetic RAM (MRAM), and RRAM, all of which offer read/write speeds over 1,000 times faster than NAND Flash and operate at extremely low currents in the nanoampere range [2]. - RRAM is considered the most promising candidate for next-generation universal memory due to its advantages such as fast read/write speeds, low energy consumption, simple structure, long data retention, high reliability, and cost-effectiveness [3]. Group 3: RRAM Technology Overview - RRAM operates on a simple Metal-Insulator-Metal (MIM) structure, where the resistance state of the material changes through applied voltage or current, enabling digital signal storage [3][4]. - The physical mechanism of RRAM is primarily based on the Filament Theory, where a high voltage initially creates a conductive path within the insulating layer, transitioning it to a Low Resistance State (LRS) [4]. Group 4: RRAM Operation Process - The RRAM writing and erasing processes involve a Set and Reset mechanism, where specific voltages control the formation and disruption of conductive paths, allowing for data storage and retrieval [5][6]. - RRAM can be categorized into two types based on its operational characteristics: Unipolar, which uses a single direction of voltage for Set and Reset operations, and Bipolar, which requires opposite voltages for these operations [7].