Core Viewpoint - KAUST has achieved a groundbreaking milestone in chip design by creating the world's first six-layer stacked hybrid CMOS structure, setting new standards for integration density and energy efficiency in large-area electronic devices [1][2]. Group 1: Research Achievements - The research team at KAUST has successfully developed a six-layer stacked hybrid CMOS structure, surpassing the previous limit of two layers in hybrid CMOS technology [1]. - This innovation opens new possibilities for miniaturization and high-performance development of electronic devices, which is crucial for flexible electronics, smart health, and the Internet of Things (IoT) [1]. Group 2: Technical Insights - The traditional method of enhancing integration density by reducing transistor size is reaching quantum mechanical limits, prompting the need for alternative approaches such as vertical stacking of transistors [2]. - KAUST's manufacturing process maintains temperatures below 150°C, with most steps performed at room temperature, minimizing damage to underlying structures during layer addition [2]. - The team has optimized the manufacturing process to achieve smoother surfaces between layers and precise alignment for optimal connectivity, significantly improving the vertical stacking technique [2].