Core Viewpoint - The article emphasizes the transformative potential of third and fourth generation semiconductor materials, particularly diamond and SiC, in addressing the thermal management challenges posed by the increasing power demands of AI and HPC chips, which are entering the kilowatt range [4][5]. Group 1: Third and Fourth Generation Semiconductor Materials - The core value of third and fourth generation semiconductors lies in their ability to meet the demands of the post-Moore era, focusing on the balance of thermal, electrical, and power characteristics rather than merely replacing silicon [5]. - The first generation of silicon-based materials laid the foundation for consumer electronics, but its thermal conductivity (~150 W/m·K) has reached its physical limit under kilowatt-level power [5]. - The emergence of third generation materials like SiC and GaN targets high-frequency and high-power applications, while the fourth generation, centered on diamond, addresses the thermal management needs of AI chips [5][6]. Group 2: Diamond's Technological Pathways - Three key technological pathways for diamond applications are identified: diamond-SiC composite materials, transistor-level diamond growth, and wafer-level heterogeneous integration [6][8][9]. - Diamond-SiC composites offer a "patch" solution for current AI chip thermal stress, significantly reducing junction temperature by 40-60°C and enhancing output power by over 30% in GaN high electron mobility transistor packaging [7]. - Transistor-level diamond growth aims to eliminate interface thermal resistance by growing diamond layers directly on transistors, although it is still in the experimental phase [8]. - Wafer-level heterogeneous integration seeks to eliminate thermal resistance through atomic-level bonding of diamond and silicon/GaN wafers, addressing thermal management in 3D stacked chips [9]. Group 3: Glass Substrate and SiC Interposer - The article discusses the dual-track approach of using glass substrates and SiC interposers, with diamond serving as a high-end performance enhancer [12][13]. - Glass substrates are expected to dominate large-scale structural packaging by 2028-2030 due to their high flatness and adjustable CTE, but their low thermal conductivity (1.1-1.4 W/mK) poses a significant limitation [12]. - The optimal solution for high-end packaging will combine glass substrates with diamond heat dissipation layers, leveraging the strengths of both materials [12][13]. Group 4: Industry Implications and Opportunities - The industry is urged to focus on "collaborative adaptation" and "implementation capability" to seize opportunities in the third and fourth generation semiconductor market [15]. - Companies should explore SiC interposers for high thermal efficiency applications and develop glass substrate cooling solutions, including high-density TGV copper arrays and diamond micro-powder additives [15]. - The article highlights the importance of collaboration between material, packaging, and equipment companies to overcome challenges in heterogeneous integration and microfluidic cooling technologies [17].