Core Viewpoint - The importance of high-performance and low-power memory, particularly Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM), is increasing with the advent of the AI era due to its ultra-fast write times, low power consumption, and virtually unlimited write cycles [1] Group 1: SOT-MRAM Technology and Challenges - SOT-MRAM is a research hotspot for non-volatile memory chips, with significant exploration by leading institutions and companies, including IMEC, TSMC, and several Chinese firms [1] - Current SOT-MRAM technologies face challenges such as manufacturing yield bottlenecks and difficulties in balancing various performance and reliability metrics [1] - The vertical magnetization of magnetic tunnel junctions is seen as a mainstream technology path for high-density SOT-MRAM, but it suffers from low tunnel magnetoresistance (TMR) rates, which limits read speeds [1] Group 2: Breakthroughs by Hikstor Technology - Hikstor Technology has successfully overcome the vertical magnetization system's technical bottleneck, achieving over 200% TMR in vertical SOT-MRAM films and 168% TMR on 12-inch wafers, meeting product development needs [2] - The new SOT-MRAM technology developed by Hikstor features a write speed of 2 nanoseconds, a power consumption of 0.9 picojoules per bit, and a data retention capability of over 10 years at room temperature [2] Group 3: Innovative Device Architecture - Hikstor has introduced a new self-aligned storage device technology (SARR), which addresses the core challenge of achieving high storage element yield in standard SOT-MRAM devices, providing a manufacturing solution similar to STT-MRAM [3] Group 4: Company Overview - Zhejiang Hikstor Technology Co., Ltd. was established in 2016 and is a leading enterprise in the research and production of new non-volatile memory chip technology in China, having achieved mass production of several STT-MRAM products [7]