Core Viewpoint - Recent research from UNIST reveals that the key performance indicator for semiconductor devices, field-effect mobility, may be overestimated by up to 30 times due to structural differences in devices, necessitating new design standards to address this issue [2][3][4]. Group 1: Research Findings - The research team discovered that the measurement of charge mobility, a critical indicator of semiconductor performance, can be significantly inflated due to the phenomenon of fringe current, where current flows through the edges of electrodes rather than solely through the main channel [3]. - The team proposed a new design standard for thin-film transistors, suggesting that the channel width should be less than the electrode width, or at least 12 times smaller than the total device length (L/W ≤ 1/12), to mitigate the impact of fringe current [3][4]. - Experimental validation showed that adhering to the new design standard eliminates discrepancies between measured and actual mobility, allowing for accurate performance assessments [3]. Group 2: Recommendations and Implications - The research team recommends using Hall mobility as a cross-validation method, as it measures the inherent electrical properties of semiconductor materials and is not influenced by device geometry, thus avoiding measurement errors [4]. - Professor Kim emphasized the importance of accurate performance measurements, stating that overestimating material performance could lead to misallocation of research resources and hinder the objective development of the semiconductor industry [4]. - The findings were published in ACS Nano and received funding from various Korean governmental bodies, highlighting the significance of the research in establishing a globally applicable design standard [4].