Core Viewpoint - The report from GF Securities indicates that emerging technologies such as 4F2 and CBA are expected to become significant breakthroughs for enhancing the PPA (Power, Performance, Area) of DRAM chips, leading to increased equipment demand in the DRAM industry [1] Group 1: 4F2 Technology - 4F2 is an efficient technology route for increasing storage density, allowing DRAM cells to be arranged in a 3D vertical layout, which can reduce the cell size by approximately 30% compared to the 6F2 structure, thus improving area performance and storage density [2] - Companies like Samsung and Hynix are actively developing 4F2-related DRAM technologies, with Samsung utilizing VCT technology to vertically align transistors and Hynix planning to adopt the 4F2VG platform below the 10nm node for higher density and efficiency [2] Group 2: CBA Technology - CBA technology is crucial for optimizing the system-level performance of DRAM chips, allowing for the separate manufacturing of storage array wafers and logic control unit wafers, which are then bonded together to achieve better overall performance [3] Group 3: Equipment Demand Diversification - The optimization of DRAM chip architecture is expected to diversify equipment demand, as the industry explores and applies new technologies like 4F2 and CBA, which will increase the need for deposition, etching, bonding, CMP, and plating processes, thereby opening up growth opportunities for related equipment [4]