Core Viewpoint - The article discusses the significant transformation in data centers from a "compute-centric" approach to a "bandwidth-driven" model, highlighting the rise of High Bandwidth Memory (HBM) as a crucial infrastructure for large model computations [1][2]. Group 1: HBM Market Dynamics - HBM has evolved from being a standard component in high-performance AI chips to a strategic focal point in the semiconductor industry, with major players like Samsung, SK Hynix, and Micron viewing it as a key driver for future revenue growth [2][4]. - SK Hynix has established a dominant position in the HBM market, holding approximately 50% market share, with a staggering 70% share in the latest HBM3E products [6][10]. - Samsung is also actively pursuing custom HBM supply agreements with various clients, indicating a competitive landscape among these semiconductor giants [6][10]. Group 2: Customization Trends - Customization of HBM is becoming a necessity, driven by cloud giants seeking tailored AI chips, with SK Hynix already engaging with major clients like NVIDIA and Microsoft for custom HBM solutions [4][5]. - The integration of base die functions into logic chips allows for greater flexibility and control over HBM core chip stacks, optimizing performance, power consumption, and area [7][9]. Group 3: Hybrid Bonding Technology - Hybrid bonding is emerging as a critical technology for future HBM development, addressing challenges posed by traditional soldering techniques as stacking layers increase [12][18]. - Major companies, including Samsung and SK Hynix, are exploring hybrid bonding for their next-generation HBM products, which could lead to significant advancements in performance and efficiency [13][18]. Group 4: Future HBM Innovations - The article outlines the anticipated evolution of HBM technology from HBM4 to HBM8, detailing improvements in bandwidth, capacity, and power efficiency, with HBM8 expected to achieve a bandwidth of 64 TB/s and a capacity of up to 240 GB per module [20][21][27]. - Key innovations include the introduction of 3D integration technologies, advanced cooling methods, and AI-driven design optimizations, which are set to enhance the overall performance and efficiency of HBM systems [29][30]. Group 5: Competitive Landscape - The competition among DRAM manufacturers and bonding equipment suppliers is intensifying, with companies needing to collaborate across various domains to succeed in the evolving HBM market [33]. - The future of HBM technology will likely be shaped by the ability of companies to integrate diverse processes and resources, with the race for dominance in the post-AI era just beginning [33].

如果您希望可以时常见面，欢迎标星收藏哦~ 来源：内容编译自semiengineering，谢谢。 从平面 SoC 到 3D-IC 和先进封装的转变需要更薄的晶圆，以提高性能和降低功率，从而减少信号 需要传输的距离和驱动信号所需的能量。 对超薄晶圆的需求正在增长。包含 12 个 DRAM 芯片和基础逻辑芯片的 HBM 模块的总厚度仍小于 优质硅晶圆的厚度。薄晶圆在组装扇出晶圆级封装和用于 AI 应用的先进 2.5D 和 3D 封装方面也发 挥着关键作用，这些封装的增长速度远快于主流 IC。再加上业界对轻薄手机、可穿戴设备和医疗电 子产品的需求，似乎如果没有可靠地加工薄硅晶圆的能力，现代微电子就不可能实现。 薄硅通孔 (TSV) 的揭示工艺是一种需要背面处理的经典工艺。"几乎任何堆叠设备都必须有硅通 孔，" Amkor Technology高级 3D/技术总监 Rick Reed 说道。"在许多当前应用中引入硅通孔需要 非常受控的减薄工艺，而且由于您几乎总是需要进行背面处理，因此该工艺立即需要临时键合和解 键合工艺。" 任何晶圆减薄工艺的第一步都是确定目标。"如果硅片中有我们所谓的盲 TSV，并且您不了解晶圆中 ...