Core Viewpoint - The article discusses advancements in the manufacturing of two-dimensional indium selenide (InSe) semiconductor wafers, highlighting their potential to overcome limitations of traditional silicon-based technologies in next-generation integrated circuits [2][3]. Group 1: Technological Advancements - The demand for computing power driven by AI and IoT applications is pushing traditional silicon transistor technology to its physical limits, necessitating the development of new semiconductor materials [3]. - InSe is recognized for its superior properties, including low electron effective mass and high thermal velocity, making it a strong candidate to surpass silicon limitations [3]. - A novel "solid-liquid-solid" growth strategy has been developed to achieve high-quality InSe wafer production, addressing a critical bottleneck in its industrial application [3]. Group 2: Performance Metrics - The produced 2-inch InSe wafers exhibit excellent electrical performance, achieving an average mobility of 287 cm² V⁻¹ s⁻¹ and a subthreshold swing as low as 67 mV/dec [3]. - The key parameters of ultra-short channel devices (below 10 nm) fabricated from InSe significantly outperform the current leading technology at Intel's 3 nm node [3]. Group 3: Industry Implications - The successful fabrication of high-quality two-dimensional semiconductors is expected to drive advancements in high-performance, low-power computing and communication technologies [3]. - The research is anticipated to play a crucial role in emerging fields such as artificial intelligence, autonomous driving, and smart terminals [3].