Core Viewpoint - The article discusses the significant advancements in GaN (Gallium Nitride) technology for server power supplies, highlighting its efficiency and potential to address the energy consumption challenges faced by global data centers [4][10]. Group 1: Industry Context - The global data center sector is experiencing a surge in power consumption, projected to reach 3000 TWh by 2030, which will account for 10% of the world's total electricity consumption [4]. - Traditional silicon-based power supplies are becoming less efficient, particularly in the 20%-50% load range, where their conversion efficiency is only 90%-94% [4][5]. Group 2: Technological Advancements - InnoGaN technology from InnoSpectra has enabled power supplies to achieve over 96% conversion efficiency, surpassing the highest 80PLUS Titanium standard [4][5]. - The GaN-based power supplies can reduce energy losses by over 30% compared to traditional power supplies, particularly in the critical load range [5][7]. Group 3: Economic Impact - Implementing GaN power solutions can save over 2 million yuan annually in electricity costs for every 10,000 servers, while also reducing heat generation by 50% and cooling energy consumption by 18% [7]. - A 1% increase in efficiency in a 10MW intelligent computing center can lead to significant savings in electricity costs [4]. Group 4: Product Innovations - The ISG612XTD SolidGaN IC, a high-power GaN product, is a key component in achieving these efficiency gains, featuring a TO-247-4 package and a voltage rating of 700V [9]. - The INN100EA035A GaN power transistor, with a dual-side cooling design, enhances thermal performance and efficiency, making it suitable for AI server power and GPU applications [15][17]. Group 5: Future Directions - InnoSpectra is expanding its GaN technology offerings, including a 2kW-8kW power solution matrix for AI server 48V power architectures, which supports high-density layouts and meets stringent cooling requirements [10][12]. - The development of a 100V half-bridge driver, INS2002FQ, further complements the GaN solutions, enabling high efficiency and compact designs for various applications [18].