Core Viewpoint - The Chinese Academy of Sciences has successfully developed a solid-state DUV (Deep Ultraviolet) laser that emits coherent light at 193nm, aligning with the current mainstream DUV exposure wavelength, potentially advancing domestic semiconductor processes to the 3nm node [4]. Group 1: Technology Development - The research team published their findings in the International Society for Optical Engineering, showcasing a solid-state DUV laser source that theoretically supports semiconductor manufacturing processes down to the 3nm node, paving the way for domestic photolithography technology [4]. - The new solid-state laser technology utilizes a Yb:YAG crystal amplifier as the core light source, employing a technique of splitting, frequency conversion, and synthesis to achieve laser output in a fully solid-state structure [5]. Group 2: Comparison with Existing Technologies - Current global photolithography giants like ASML, Nikon, and Canon rely on gas laser technology, specifically fluorine excimer lasers, which require continuous injection of argon-fluorine gas and operate under high-pressure electric fields, making their systems complex and energy-intensive [4][5]. - The solid-state design eliminates the dependency on rare gases, theoretically allowing for a reduction in the size of photolithography systems by over 30% [5]. Group 3: Performance and Future Prospects - The average power output of the new technology is currently 70mW with a frequency of 6kHz, which is only 1% of traditional systems, indicating that there is significant room for improvement [5]. - Achieving breakthroughs in power density and frequency stability could potentially alter the existing technological landscape of DUV photolithography equipment [5]. - The paper acknowledges that there is still a significant gap between the laboratory prototype and industrial applications, necessitating collaborative efforts in materials science and precision manufacturing [5].