Core Insights - A research team led by Rice University has achieved the strongest phonon interference effect to date in silicon carbide systems, known as "Fano resonance," with an intensity two orders of magnitude higher than previous studies [1] - This phonon-based technology is expected to advance molecular-level sensing technology and open new application pathways in energy harvesting, thermal management, and quantum computing [1] Group 1 - The interference phenomenon, akin to ripples in a pond, enhances or cancels out various waves such as light, sound, and atomic vibrations, providing power for high-precision sensors and potential applications in quantum computing [1] - The breakthrough relies on constructing a two-dimensional metallic interface on a silicon carbide substrate, embedding several layers of silver atoms between graphene and silicon carbide, significantly enhancing the interference effect of different vibration modes [1] Group 2 - The team utilized Raman spectroscopy to study phonon interference, revealing highly asymmetric line shapes in the spectra, with some cases showing complete "valleys," indicative of strong interference and unique anti-resonance patterns [2] - The interference sensitivity is high enough to detect single molecules without chemical labels, making the device simple and scalable, with potential applications in quantum sensing and next-generation molecular detection [2] - Low-temperature experiments confirmed that this effect is entirely due to phonon interactions rather than electronic effects, with this "pure phonon" quantum interference being rare and only occurring in specific two-dimensional metal/silicon carbide systems [2]