Core Viewpoint - Garen Semi has announced the launch of the world's first 8-inch gallium oxide (Ga2O3) wafer, becoming the first company globally to master the technology for growing 8-inch gallium oxide single crystals [1] Group 1: Company Developments - Garen Semi previously achieved the growth of 2-inch, 4-inch, and 6-inch gallium oxide single crystals in 2022, 2023, and 2024 respectively [1] - The new 8-inch single crystal offers superior wafer area utilization and is compatible with existing 8-inch silicon wafer production lines, which will accelerate the industrial application of gallium oxide [1] Group 2: Material Advantages - Gallium oxide, specifically β-Ga2O3, has a wider bandgap of 4.85 eV compared to silicon carbide and gallium nitride, along with excellent thermal and chemical stability and higher breakdown electric field strength, making it a star material in the fourth generation of semiconductors [1] - Power devices based on gallium oxide can provide lower resistance and higher conversion efficiency, potentially pushing electric vehicle platform voltages to 1200V [1] - Gallium oxide material has a UV cutoff wavelength of 260nm, with low dependence of UV transmittance on carrier concentration, making it suitable for manufacturing deep ultraviolet optoelectronic devices [1]