Group 1 - The core viewpoint of the news highlights significant advancements in the GaN/SiC integration field, particularly through the establishment of the National Third-Generation Semiconductor Technology Innovation Center in Shenzhen, which has achieved breakthroughs in high-quality GaN/AlGaN heterostructure epitaxy on 8-inch 4° inclined 4H-SiC substrates [1] - The innovation center's achievement is expected to fundamentally address reliability issues in GaN materials by significantly reducing defect density and enhancing thermal performance, thus providing a competitive alternative to existing silicon-based GaN technology [1] - The breakthrough allows for mass production of high-quality GaN epitaxial materials, paving the way for the development and industrialization of GaN/SiC hybrid transistors [1] Group 2 - The demand for high-temperature, high-voltage, high-frequency, and high-power performance in emerging technologies such as 5G, automotive, wireless communication, and aerospace is driving the need for GaN as a representative of third-generation wide bandgap semiconductors [2] - GaN devices exhibit advantages such as low conduction resistance, high electron mobility, and excellent thermal conductivity, which can significantly enhance the performance of new power electronic devices while also achieving energy savings [2] - Major manufacturers are seeking technological breakthroughs in vertical structures and increased integration to obtain superior GaN devices and capture market share, indicating strong growth potential in automotive electrical systems, large-scale integrated circuits, and wireless communication [2]