用于保护DRAM存储器装置免受行锤效应的方法和电路
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高通取得保护DRAM免受行锤效应专利
Jin Rong Jie· 2026-02-06 04:46
Group 1 - Qualcomm has obtained a patent titled "Method and Circuit for Protecting DRAM Memory Devices from Hammering Effects," with authorization announcement number CN116018645B, and the application date is May 2021 [1]