超大尺寸(12英吋及以上)SiC复合散热基板
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天域半导体再涨超6% 与青禾晶元达成战略合作 共同推进先进键合材料工艺开发
Zhi Tong Cai Jing· 2026-01-19 03:38
Core Viewpoint - Tianyu Semiconductor (02658) has seen a stock increase of over 6%, currently trading at 54.65 HKD, with a transaction volume of 13.8852 million HKD, following the announcement of a strategic cooperation agreement with Qinghe Crystal [1] Group 1: Strategic Cooperation - The agreement between Tianyu Semiconductor and Qinghe Crystal aims to leverage Tianyu's advantages in silicon carbide (SiC) materials and Qinghe's expertise in bonding equipment customization and optimization [1] - The collaboration will focus on the development of bonding materials, including bonding SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] - The board believes that both parties will utilize their competitive advantages to establish a mutually beneficial partnership, enhancing the development of advanced bonding material solutions and optimizing production processes [1] Group 2: Expected Outcomes - The cooperation is expected to improve the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1]
天域半导体与青禾晶元订立战略合作协议 共同开展键合材料的工艺开发及技术迭代
Zhi Tong Cai Jing· 2026-01-16 13:24
Core Viewpoint - Tianyu Semiconductor (02658) has entered into a strategic cooperation agreement with Qinghe Crystal Semiconductor Technology (Group) Co., Ltd. to leverage their respective strengths in silicon carbide (SiC) materials and bonding equipment for the development of advanced bonding materials and technology iterations [1] Group 1: Strategic Cooperation - The agreement aims to establish a mutually beneficial partnership by combining Tianyu's industry strength in SiC epitaxial wafers with Qinghe's expertise in bonding integration technology and equipment [1] - The collaboration will focus on the development of bonding materials, including bonded SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] Group 2: Expected Outcomes - The partnership is expected to enhance the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1]
天域半导体(02658)与青禾晶元订立战略合作协议 共同开展键合材料的工艺开发及技术迭代
智通财经网· 2026-01-16 13:23
Core Viewpoint - Tianyu Semiconductor (02658) has entered into a strategic cooperation agreement with Qinghe Crystal Semiconductor Technology (Group) Co., Ltd. to leverage their respective strengths in silicon carbide (SiC) materials and bonding equipment optimization for the development of advanced bonding materials [1] Group 1: Strategic Cooperation - The agreement aims to establish a mutually beneficial partnership by combining Tianyu's industry strength in SiC epitaxial wafers with Qinghe's expertise in bonding integration technology and equipment [1] - The collaboration will focus on the development and technological iteration of bonding materials, including bonding SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] Group 2: Expected Outcomes - The partnership is expected to enhance the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1]