Core Viewpoint - The article highlights the successful development of the world's first 12-inch high-quality silicon carbide (SiC) epitaxial wafer by Hantian Technology in Xiamen Torch High-tech Zone, which is expected to significantly enhance production efficiency and reduce manufacturing costs in the SiC industry [2]. Group 1 - Hantian Technology has developed a 12-inch SiC epitaxial wafer, marking a significant technological breakthrough [2]. - The 12-inch wafer can carry 4.4 times more chips compared to the 6-inch wafer and 2.3 times more than the 8-inch wafer, leading to increased production efficiency [2]. - The company has initiated preparations for the mass supply of the 12-inch SiC epitaxial wafers, with key performance indicators showing excellent results, including a uniformity control of epitaxial layer thickness within 3% and a chip yield greater than 96% [2].