Core Viewpoint - Samsung Electronics is facing challenges in the commercialization of its ninth-generation (V9) high-capacity NAND products, originally planned for last year, due to performance issues that require design and process adjustments [2][3]. Group 1: Product Development Challenges - The V9 NAND utilizes a 280-layer structure and began initial mass production in April last year with a 1Tb capacity based on TLC (Triple-Level Cell) technology, which stores 3 bits of data per cell [3]. - Samsung announced the start of V9 QLC (Quad-Level Cell) NAND mass production in September last year, which can store 4 bits of data per cell, offering advantages for high-capacity storage [3]. - However, early products encountered performance declines due to design issues, prompting Samsung to optimize the design and processes, with expectations to complete these improvements by the first half of next year [3]. Group 2: Market Position and Competition - The demand for high-capacity NAND products is rapidly increasing, particularly driven by the growth of the AI industry, which requires handling large volumes of data [4]. - Despite maintaining a leading position in the overall NAND market, Samsung is at a disadvantage in the QLC NAND segment, with an expected market share of only about 9% next year, compared to competitors like SK Hynix at 36%, Kioxia and SanDisk at 29%, and Micron at 17% [5]. - The importance of QLC NAND is growing as global tech giants invest and replace traditional NAND, indicating that Samsung must ensure stable mass production and expansion of its advanced products to benefit from this trend [5].