Core Insights - Lam Research and JSR Corporation have entered into a non-exclusive cross-licensing and collaboration agreement aimed at advancing semiconductor manufacturing, particularly focusing on dry resist technology for EUV lithography and next-generation materials [1][2][3] Group 1: Partnership Details - The collaboration will leverage JSR's innovative semiconductor materials, including metal oxide solutions, alongside Lam's expertise in deposition, etch, and EUV patterning technologies [2][3] - The partnership aims to accelerate the industry's transition to advanced patterning technologies, supporting chipmakers in scaling for AI and high-performance computing [2][3][4] Group 2: Technological Advancements - The companies will work together to integrate JSR/Inpria's patterning resists and films with Lam's etch and dry resist deposition technologies [3] - Research and development will focus on metal oxide resists, high NA EUV patterning for advanced nodes, and other advanced films for next-generation patterning [3][4] Group 3: Legal Resolution - Lam and Inpria have agreed to dismiss all claims against each other in the litigation Inpria v. Lam Research, along with related inter partes review proceedings [4]