Core Viewpoint - Samsung Electronics is focusing on "Fluxless" as a new bonding technology for high-bandwidth memory (HBM), currently in the research and development phase, with evaluations expected to be completed by the end of the year [1][4][5]. Group 1: Current Technology and Developments - Samsung is currently using Non-Conductive Film (NCF) as a post-processing technology for HBM manufacturing, which involves stacking multiple DRAMs to enhance data processing performance [2][3]. - The existing MR-MUF (Mass Reflow Underfill) technology requires the application of a flux to remove oxidation from bumps, which may not be effective with the increased number of I/O terminals in HBM4, potentially compromising chip reliability [3][4]. Group 2: Future Technology Considerations - Samsung is closely examining the application of fluxless bonding, initially intended for logic semiconductors but now prioritized for HBM4 due to investment focus [4][5]. - The industry anticipates that Samsung will consider three bonding technologies for HBM4: NCF, fluxless, and hybrid bonding, with challenges in reliability and thermal characteristics for NCF and maturity for hybrid bonding [6]. Group 3: Competitive Landscape - SK Hynix is also exploring the application of fluxless bonding for HBM4, benefiting from its existing use of MR-MUF technology, which may provide easier access to fluxless methods [6].