中科创星表示，二维半导体技术作为延续摩尔定律的技术路径，能突破传统硅基半导体物理极限，展现出巨大的发展潜力和广阔的应用前景。而原集微核 心团队在二维半导体领域具有多年积累和丰富成果。作为中科创星超前孵化的企业之一，我们期待原集微未来快速发展，成长为二维半导体领域的"台积 电"。 原集微二维半导体于今年6月底启动建设，仅用90天便在9月顺利落成；首期设备已于10月进场安装。 中赢创投认为："二维半导体是延续摩尔定律的关键材料，原集微打通了二维半导体从科研到应用的关键环节，有望成为二维半导体集成电路工艺标准的 制定者与链主企业，具备高成长性与战略投资价值。" 投资界12月17日消息，原集微科技上海有限公司（以下简称"原集微"）宣布完成近亿元天使轮融资，本轮融资由中赢创投、浦东创投领投，上海天使会、 新鼎资本、玖华弘盛、仁智资本跟投，老股东中科创星、司南基金等机构持续加码。募集资金将专项用于原集微二维半导体工程化验证示范工艺线的核心 工艺研发、专用设备购买、人才团队扩充，加速推动二维半导体芯片从实验室走向规模化量产。 原集微作为我国首家专注于二维半导体集成电路制造的高科技企业，由复旦大学包文中研究员创办，团队深耕该 ...

Core Viewpoint - The article discusses the establishment and development of Yuanjiwei Technology, a company founded by Professor Bao Wenzhong from Fudan University's Microelectronics Institute, focusing on the commercialization of two-dimensional semiconductor materials to overcome the limitations of traditional silicon-based chips [2][5]. Group 1: Company Overview - Yuanjiwei Technology was founded in 2025, leveraging over a decade of research in the semiconductor field by Professor Bao Wenzhong [5]. - The company aims to develop atomic-level chips and heterogeneous integration technologies, focusing on ultra-low power consumption, edge computing, high-sensitivity sensing, and radiation-resistant chips [5]. - The team consists of over 10 senior professors/researchers and more than 20 national-level leading talents, with extensive experience in two-dimensional semiconductor wafer integration processes and device fabrication [5][7]. Group 2: Funding and Investment - Yuanjiwei has recently completed several million yuan in seed and pre-A round financing, with investments from Zhongke Chuangxing, Fuyong Investment, and other institutions [2]. - The funding will be used to accelerate the company's industrialization efforts [2]. Group 3: Technological Advancements - Two-dimensional semiconductor materials are recognized as key materials for extending Moore's Law, offering advantages such as reduced leakage current, controlled power consumption, fewer processing steps, and lower manufacturing costs compared to three-dimensional materials [3][5]. - Yuanjiwei has developed the world's first 32-bit RISC-V architecture microprocessor based on two-dimensional semiconductor materials, marking a significant breakthrough in China's two-dimensional semiconductor chip field [5][7]. - The company is advancing through a pathway of "laboratory validation - pilot line - mass production," integrating with existing silicon-based manufacturing lines to transition technology from the lab to industrial application [5]. Group 4: Industry Collaboration and Future Prospects - The project team collaborates closely with industry leaders and research centers, establishing partnerships to deepen the development of two-dimensional integration processes [7]. - Yuanjiwei is positioned to lead in the commercialization of two-dimensional semiconductor applications, with expectations for rapid validation and iteration in advanced processes [6][7].

Core Viewpoint - The research from the University of California, Santa Barbara (UCSB) introduces a significant advancement in semiconductor technology through the development of new 3D transistors utilizing 2D semiconductor technology, paving the way for energy-efficient and high-performance electronic products [1][2]. Group 1: Breakthrough in Transistor Miniaturization - The strategy to enhance device performance involves miniaturizing transistors to allow for denser packaging and more operations on the same chip size [2]. - Traditional silicon technology faces limitations in miniaturization due to the "short-channel effect," which leads to subthreshold leakage and poor switching performance, making it challenging to maintain low power consumption while reducing transistor size [2][3]. - The introduction of Fin-FET technology over a decade ago has alleviated many of these limitations, but scaling down to channel lengths below 10 nanometers while maintaining performance and low power consumption is increasingly difficult [2]. Group 2: 2D Semiconductor Integration - UCSB's research demonstrates that using 2D semiconductors in 3D gate-all-around (GAA) transistor structures can enhance electrostatic characteristics, enabling the creation of transistors with channel lengths reduced to a few nanometers, significantly improving performance and energy efficiency [3][5]. - The newly introduced nanosheet FET architecture maximizes the unique properties of atomically thin 2D materials, such as tungsten disulfide (WS₂), achieving a tenfold increase in integration density while maintaining performance metrics [5]. Group 3: Advanced Simulation Tools - The research team employed cutting-edge simulation tools, including QTX, to evaluate the performance of their designs, allowing for the simulation of critical factors such as non-parabolic energy bands and contact resistance [7]. - The combination of advanced quantum transport methods with practical considerations like non-ideal contact resistance and capacitance results in a comprehensive and realistic framework for transistor design [7]. Group 4: Future Prospects - The findings indicate that 3D-FETs based on 2D semiconductors outperform silicon-based 3D-FETs in key metrics such as drive current and energy-delay product, with the thinness of 2D materials reducing device capacitance and power consumption [8]. - The UCSB team plans to deepen collaborations with industry partners to accelerate the adoption of these technologies and improve models by incorporating real-world factors [8]. - This research not only showcases the potential of 2D materials but also provides a detailed blueprint for their integration into 3D transistor designs, marking a crucial step in the semiconductor industry's pursuit of continuing Moore's Law [8].