Core Insights - Samsung Electronics' research team has confirmed that combining ferroelectric materials with oxide semiconductors in NAND flash memory structures can potentially reduce power consumption by up to 96% compared to existing products [1][2]. Group 1: Research Findings - The paper titled "Ferroelectric Transistors for Low-Power NAND Flash Memory" was published in the journal Nature, representing a collaborative effort by 34 researchers from Samsung Advanced Institute of Technology (SAIT) and the Semiconductor Research Institute [1]. - Traditional NAND flash memory stores data by injecting electrons into storage cells, requiring an increase in the number of layers to enhance storage capacity. However, this leads to increased read and write power consumption, creating a bottleneck in industry development [2]. - The SAIT research team identified a breakthrough by leveraging the inherent properties of oxide semiconductors, which, despite being seen as a limitation in high-performance devices, became a key factor in significantly reducing power consumption in ferroelectric-based NAND flash memory [2]. Group 2: Future Applications - Once commercialized, this technology is expected to greatly enhance power efficiency across various fields, from large-scale AI data centers to mobile devices and edge AI systems. The reduction in power consumption will not only help lower operational costs for data centers but also extend battery life for mobile devices [3]. - The lead author of the research, a Samsung SAIT researcher, expressed pride in confirming the feasibility of ultra-low power NAND flash memory, emphasizing the growing importance of storage in the AI ecosystem and the goal of advancing subsequent research towards product commercialization [3].