Core Viewpoint - The establishment of the first national standard for extreme ultraviolet (EUV) photoresist testing in China marks a significant step towards addressing the country's reliance on imported semiconductor materials and enhancing its competitiveness in the global semiconductor industry [2][5]. Group 1: Standard Development - The proposed standard, titled "Test Methods of Extreme Ultraviolet (EUV) Photoresist," was initiated on October 23, 2023, and will be open for public comment until November 22, 2023 [2][3]. - The standard is being drafted by key institutions including Shanghai University, Zhangjiang National Laboratory, Shanghai Huali Integrated Circuit Manufacturing Co., and Shanghai Micro Electronics Equipment (Group) Co., Ltd. [3][4]. - This standard aims to fill the gap in China's testing framework for advanced lithography materials, providing a unified and scientific performance evaluation framework [3][4]. Group 2: Importance of EUV Photoresist - EUV photoresist is critical for semiconductor manufacturing at 7nm and below, with a working wavelength of 13.5nm, essential for producing advanced logic and high-density storage chips [4][7]. - Currently, the global EUV photoresist market is dominated by foreign companies, with JSR and Tokyo Ohka holding over 95% market share, while domestic production remains non-existent [4][7]. - The standard is expected to enhance the verification efficiency of domestic photoresists, promote mutual recognition of test data, and reduce technical risks in production lines [5][8]. Group 3: Strategic Implications - The implementation of this standard is anticipated to drive technological upgrades in local testing equipment and support cost control in research and development [5][8]. - It will accelerate the transition from long-term reliance on imports to self-sufficiency in semiconductor materials, thereby supporting the stability and security of the high-end chip manufacturing supply chain [5][8]. - The establishment of this standard signifies a systematic step towards overcoming the "bottleneck" issues in key EUV materials, enhancing China's voice in the global semiconductor materials standard system [5][8]. Group 4: Research Progress - Recent advancements in EUV photoresist research have been reported by various Chinese universities, contributing to the foundational knowledge necessary for developing domestic high-end photoresists [9]. - Notable achievements include the use of cryo-electron tomography to reveal the three-dimensional microstructure of photoresist molecules and breakthroughs in titanium cluster materials that enhance photo-sensitivity [9]. - These research efforts are crucial for accumulating theoretical and experimental support for the technological breakthroughs needed in domestic high-end photoresists [9].