Core Viewpoint - Samsung Electronics and SK Hynix are accelerating the development of the next-generation 3D Dynamic Random Access Memory (DRAM), specifically the vertical structure "4F² DRAM," aiming to complete and test early prototypes by the end of this year [2][3]. Group 1: 4F² DRAM Development - The 4F² DRAM architecture overcomes the limitations of traditional planar DRAM by utilizing a vertical stacking method, which is expected to enhance performance, data transfer rates, and energy efficiency [2]. - Samsung and SK Hynix plan to validate the commercial viability of the 4F² DRAM prototype before advancing to 3D DRAM development [3]. - Micron Technology has opted to skip the 4F² DRAM stage and move directly into 3D DRAM development [3]. Group 2: Industry Challenges and Innovations - The transition to vertical structure designs is seen as essential to overcome the challenges posed by the shrinking of planar DRAM, which has led to increased complexity and manufacturing costs [4]. - Samsung anticipates launching the 4F² DRAM following its seventh-generation 10nm products, while SK Hynix may introduce its 4F² series in the next generation [4]. - The performance of the 4F² DRAM is projected to improve by nearly 50% compared to existing models, with a potential for mass production within three years if development progresses smoothly [4].