Core Viewpoint - Terahertz waves are considered a powerful tool for fast data transmission in potential 6G networks, but practical implementation has proven challenging. A research team is working on a device that integrates terahertz waves onto a chip, bringing this technology closer to reality [1][3]. Group 1: Terahertz Wave Characteristics - Terahertz waves are located in the electromagnetic spectrum between microwaves and far-infrared light, typically ranging from 0.1 to 10 terahertz. They can penetrate many materials and transmit more information than radio waves, but their practical use is limited due to challenges such as absorption by water vapor and loss in common electronic materials like copper [1]. - The dielectric constant difference between silicon (11.9) and air (1) leads to significant signal loss when generating terahertz waves on a chip, as part of the wave is reflected at the interface [2]. Group 2: Innovative Solutions - Researchers at MIT have developed a method to enhance terahertz wave transmission by applying a specially patterned dielectric sheet on the back of the chip, which allows most waves to transmit rather than reflect. This approach achieves higher radiation power without the need for expensive silicon lenses [3]. - The system can generate radiation in the range of 232 to 260 gigahertz, utilizing a chip with high-power Intel transistors that have a breakdown voltage of 6.3 volts and a maximum frequency of 290 GHz, surpassing traditional CMOS transistors [3]. Group 3: Cost and Applications - The terahertz radiation device is low-cost and suitable for mass production, with potential applications in high-resolution radar imaging, broadband wireless transmission, and improved medical imaging [4]. Group 4: Challenges and Future Outlook - Key challenges include managing temperature and current density, as the circuits operate under extreme conditions that can shorten transistor lifespan. Scaling the system to larger CMOS arrays will require advanced thermal management solutions [5]. - Experts view this development as a breakthrough in high-frequency electronics, combining high output power, low cost, and compact integration. However, extending this performance to higher terahertz frequencies remains a challenge due to physical limitations such as transistor cutoff frequency and interconnect losses [5].