Core Viewpoint - The competition between silicon carbide (SiC) and gallium nitride (GaN) semiconductors is intensifying, with GaN now outperforming SiC in high-temperature applications, particularly with a new GaN chip capable of operating at 800°C [2][3]. Group 1: Performance and Applications - GaN chips have unique properties that enhance their performance under high-temperature conditions, making them suitable for applications in extreme environments such as space exploration and high-speed aircraft [2][3]. - The new GaN integrated circuit, developed by a research team, utilizes high electron mobility transistors (HEMT) that allow for faster electron movement and higher current capacity compared to SiC [3][4]. Group 2: Technical Innovations - The research team implemented structural adjustments to the GaN HEMT to minimize leakage current and protect the device from environmental impacts, which is crucial for maintaining stability at high temperatures [4][5]. - The development process for the GaN chip was faster than anticipated, indicating a promising trajectory for future advancements in high-temperature electronics [4][6]. Group 3: Reliability Concerns - Despite the advantages of GaN, there are concerns regarding its long-term reliability at extreme temperatures, with potential micro-cracking issues that do not affect SiC [4][5]. - Current testing shows that the GaN chip can maintain functionality at 800°C for approximately one hour, suggesting that it may perform even better at lower temperatures [5][6]. Group 4: Future Prospects - The next steps for the research team include scaling up the device and enhancing its speed, with commercial viability expected soon due to the lack of alternatives in high-temperature electronics [6]. - The competition between GaN and SiC is expected to continue, as efforts are underway to improve SiC's performance to match GaN's capabilities at high temperatures [6].