Core Viewpoint - Understanding the thermal transport mechanisms at material interfaces is crucial for advancing semiconductor technology, particularly for miniaturized devices operating at extremely high power densities [1]. Group 1: Research Findings - The research team from Peking University published a paper in Nature on June 11, 2025, exploring phonon transport dynamics across interfaces using electron microscopy [2]. - The study utilized in-situ vibrational electron energy loss spectroscopy (EELS) to measure temperature gradient distributions at the AlN-SiC interface with nanometer resolution, overcoming previous measurement challenges [3]. - A steep temperature drop was observed within approximately 2 nanometers of the interface, allowing for the direct extraction of the interfacial thermal resistance (ITR) [4]. Group 2: Implications and Mechanisms - The mismatch in phonon mode thermal conductivity at the interface leads to a significant generation of non-equilibrium phonons in adjacent regions during thermal transport [4]. - The findings reveal the (sub)nanometer scale phonon transport dynamics and confirm the phonon inelastic scattering mechanisms involving interface modes, providing important guidance for thermal interface engineering design [5].