Core Viewpoint - The company, Lian Microelectronics (605358.SH), has signed an agreement with the Quzhou Intelligent Manufacturing New City Management Committee to invest approximately 2.262 billion yuan in a project aimed at producing 1.8 million pieces of 12-inch heavily doped substrate wafers annually, enhancing its competitiveness in the high-end power device market [1]. Investment and Project Details - The total investment for the project is about 2.262 billion yuan [1] - The construction period for the project is approximately 60 months, with investments of around 350 million yuan expected each year [1] - Upon completion, the project will add an annual production capacity of 1.8 million pieces of 12-inch heavily doped substrate wafers [1]

Core Viewpoint - The company, Lian Micro (605358.SH), announced a significant investment in a new project aimed at enhancing its production capacity for high-end power devices, which is expected to strengthen its competitive position in the market [2] Investment Details - Lian Micro's subsidiary, Jinrui Hong Microelectronics, signed an agreement with the Quzhou Intelligent Manufacturing New City Management Committee to construct a project with an annual production capacity of 1.8 million pieces of 12-inch heavily doped substrate wafers [2] - The total investment for the project is approximately 2.262 billion yuan, with a construction period of about 60 months [2] - The project will be implemented in phases, with an estimated annual investment of around 350 million yuan [2] Market Demand - The project is designed to meet the growing demand in the high-end power device market, indicating a strategic move to capitalize on industry trends [2] - Upon completion, the company will significantly increase its production capacity, adding 1.8 million pieces of 12-inch heavily doped substrate wafers annually [2]