Core Insights - The article highlights ROHM's role as a key silicon provider for NVIDIA's new 800 V High Voltage Direct Current (HVDC) architecture, which is a significant advancement in data center design aimed at enhancing efficiency, scalability, and sustainability in AI factories [1][4]. Group 1: ROHM's Technology and Offerings - ROHM's power device portfolio includes both silicon and wide bandgap technologies, such as silicon carbide (SiC) and gallium nitride (GaN), providing strategic solutions for data center designers [2]. - The RY7P250BM, a 100V power MOSFET, is specifically designed for hot-swap circuits in 48V power systems, featuring ultra-low ON resistance of 1.86 mΩ, which is crucial for high-density cloud platforms [3]. - ROHM's SiC MOSFETs excel in high-voltage, high-power environments, offering higher efficiency and reliability, aligning with the requirements of NVIDIA's 800 V HVDC architecture [5]. Group 2: Industry Collaboration and Future Directions - The transition to an 800V HVDC infrastructure is a collaborative effort, with ROHM committed to working with industry leaders like NVIDIA and data center operators to provide essential silicon technologies for next-generation AI factories [8]. - ROHM is advancing its EcoGaN™ brand, which includes GaN technologies that perform exceptionally well in the 100V to 650V range, supporting the demand for smaller, efficient power systems in AI data centers [6]. - The company offers high-power SiC modules optimized for high-efficiency power conversion, particularly suited for the centralized power systems envisioned in NVIDIA's architecture [7].