RY7P250BM
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AI时代的芯片机会,罗姆怎么看?
半导体芯闻· 2025-12-18 10:24
如果您希望可以时常见面,欢迎标星收藏哦~ 过去几年人工智能的浪潮不但让英伟达和AMD这样的算力厂商业绩暴涨,三星和SK海力士等存储 厂商也收获颇丰,就连博通和Marvell等厂商也凭借定制业务和互联产品等优势成为人工智能时代 的另一批受惠者。此外,诸如光模块供应商、线缆供应商、服务器制造商、芯片制造商,甚至芯片 设备供应商等产业链参与者也乘势成为了AI弄潮儿。 由于AI产业链庞大,供应商众多,我们并不能在一个报道中尽数详述。但从罗姆半导体(上海) 有限公司深圳分公司技术中心总经理水原徳健先生的介绍看来,这其中必然有功率器件供应商的一 席之地。 AI服务器需求猛增,电量问题凸显 无论是传统的服务器,还是新兴的AI服务器,都需要供电,这是一个毫无争议的事实。但和过往 不一样,AI时代的基础设施建设越来越多,相应的AI芯片也有了越来越大的功率,这就让与之密 切相关的能源问题,成为全球关注的重点。 水原徳健先生也承认,AI服务器的发展,最大的问题就是它的耗电量会激增。他引述相关数据介 绍说,到2030年,AI耗电量将激增至约1000TWh,至少消耗全球10%的电力。对于能源供应的充 沛的国家而言,这可能不是问题。但对 ...
ROHM Introduces a New MOSFET for AI Servers Featuring Industry-Leading* SOA Performance and Ultra-Low ON-Resistance
Globenewswire· 2025-07-01 21:00
Core Insights - ROHM Semiconductor has launched the RY7P250BM, a 100V power MOSFET designed for hot-swap circuits in 48V power systems, particularly for AI servers and industrial power supplies [1][5] - The shift from 12V to 48V power architectures is driven by the increasing power demands of AI technology and high-performance GPUs, necessitating improved power efficiency and higher current support [2][6] Product Features - The RY7P250BM is packaged in a compact 8080-size, reducing power loss and cooling requirements while enhancing server reliability and energy efficiency [3][6] - It features a low ON-resistance of 1.86mΩ, which is approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs, making it suitable for hot-swap operations [3][4] - The product achieves wide SOA tolerance, supporting 16A at 10ms and 50A at 1ms, which is critical for handling large inrush currents in AI server applications [4][5] Market Adoption - The RY7P250BM has been certified as a recommended component by a leading global cloud platform provider, indicating its expected widespread adoption in next-generation AI servers [5][9] - ROHM plans to expand its lineup of 48V-compatible power solutions, contributing to sustainable ICT infrastructure and energy savings [6][8] Application Areas - The product is applicable in various sectors, including 48V AI server systems, industrial equipment power systems, battery-powered industrial equipment, and UPS systems [7][8]
ROHM Builds the Future of AI with Optimized Solutions for NVIDIA 800V Architecture
Globenewswire· 2025-06-12 17:00
Core Insights - The article highlights ROHM's role as a key silicon provider for NVIDIA's new 800 V High Voltage Direct Current (HVDC) architecture, which is a significant advancement in data center design aimed at enhancing efficiency, scalability, and sustainability in AI factories [1][4]. Group 1: ROHM's Technology and Offerings - ROHM's power device portfolio includes both silicon and wide bandgap technologies, such as silicon carbide (SiC) and gallium nitride (GaN), providing strategic solutions for data center designers [2]. - The RY7P250BM, a 100V power MOSFET, is specifically designed for hot-swap circuits in 48V power systems, featuring ultra-low ON resistance of 1.86 mΩ, which is crucial for high-density cloud platforms [3]. - ROHM's SiC MOSFETs excel in high-voltage, high-power environments, offering higher efficiency and reliability, aligning with the requirements of NVIDIA's 800 V HVDC architecture [5]. Group 2: Industry Collaboration and Future Directions - The transition to an 800V HVDC infrastructure is a collaborative effort, with ROHM committed to working with industry leaders like NVIDIA and data center operators to provide essential silicon technologies for next-generation AI factories [8]. - ROHM is advancing its EcoGaN™ brand, which includes GaN technologies that perform exceptionally well in the 100V to 650V range, supporting the demand for smaller, efficient power systems in AI data centers [6]. - The company offers high-power SiC modules optimized for high-efficiency power conversion, particularly suited for the centralized power systems envisioned in NVIDIA's architecture [7].