RY7P250BM

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ROHM Introduces a New MOSFET for AI Servers Featuring Industry-Leading* SOA Performance and Ultra-Low ON-Resistance
Globenewswire· 2025-07-01 21:00
Endorsed by a major global cloud platform provider ROHM's New Product Expected to Gain Widespread Adoption in Next-Generation Ai Servers Especially in server application where reliability and energy efficiency are mission-critical SOA Performance Comparison Enhances reliability and durability in high-load environments Santa Clara, CA and Kyoto, Japan, July 01, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the launch of the RY7P250BM, a 100V power MOSFET optimized for hot-swap circuits i ...
ROHM Builds the Future of AI with Optimized Solutions for NVIDIA 800V Architecture
Globenewswire· 2025-06-12 17:00
Core Insights - The article highlights ROHM's role as a key silicon provider for NVIDIA's new 800 V High Voltage Direct Current (HVDC) architecture, which is a significant advancement in data center design aimed at enhancing efficiency, scalability, and sustainability in AI factories [1][4]. Group 1: ROHM's Technology and Offerings - ROHM's power device portfolio includes both silicon and wide bandgap technologies, such as silicon carbide (SiC) and gallium nitride (GaN), providing strategic solutions for data center designers [2]. - The RY7P250BM, a 100V power MOSFET, is specifically designed for hot-swap circuits in 48V power systems, featuring ultra-low ON resistance of 1.86 mΩ, which is crucial for high-density cloud platforms [3]. - ROHM's SiC MOSFETs excel in high-voltage, high-power environments, offering higher efficiency and reliability, aligning with the requirements of NVIDIA's 800 V HVDC architecture [5]. Group 2: Industry Collaboration and Future Directions - The transition to an 800V HVDC infrastructure is a collaborative effort, with ROHM committed to working with industry leaders like NVIDIA and data center operators to provide essential silicon technologies for next-generation AI factories [8]. - ROHM is advancing its EcoGaN™ brand, which includes GaN technologies that perform exceptionally well in the 100V to 650V range, supporting the demand for smaller, efficient power systems in AI data centers [6]. - The company offers high-power SiC modules optimized for high-efficiency power conversion, particularly suited for the centralized power systems envisioned in NVIDIA's architecture [7].