Core Viewpoint - Jiangsu ChaoXin Semiconductor Co., Ltd. won the gold medal at the 50th Geneva International Invention Exhibition for its self-developed silicon carbide (SiC) crystal growth technology, marking it as the first company in the SiC industry to achieve this honor [1][2]. Company Summary - ChaoXin Semiconductor is recognized as one of the only three companies globally and the only one in China to master the HTCVD innovative technology, capable of mass-producing silicon carbide substrate wafers [3]. - The company has developed a complete set of proprietary processes covering equipment, powder materials, crystal growth, wafer processing, and testing, overcoming several key technical challenges in the SiC long crystal technology field [2][3]. - The founder and CEO, Liu Xinyu, emphasizes the importance of independent innovation and the establishment of a robust industrial ecosystem in Nanjing, which is recognized as a national innovation highland for third-generation semiconductors [4]. Industry Summary - The third-generation semiconductor materials, represented by silicon carbide, are considered the cornerstone of future electronic industries, offering significant advantages over previous generations, such as high temperature and voltage resistance, and the ability to handle large currents [1]. - The global semiconductor industry is undergoing a critical upgrade, with wide applications in sectors like electric vehicles, photovoltaics, rail transportation, and smart grids [1]. - Nanjing's Jiangbei New District is developing a comprehensive industrial ecosystem that covers the entire supply chain from substrate to application, positioning itself as a significant player in the third-generation semiconductor industry [3][4].