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Core Insights - Vishay Intertechnology, Inc. has launched five new 1200 V MOSFET power modules aimed at enhancing power efficiency for medium to high frequency applications across various sectors including automotive, energy, industrial, and telecom systems [1][2]. Product Features - The new power modules, VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120, incorporate the latest generation of silicon carbide (SiC) MOSFETs and are available in the industry-standard SOT-227 package [1][3]. - Each module features a SiC MOSFET integrated with a soft body diode, which results in reduced switching losses and improved efficiency for applications such as solar inverters, electric vehicle chargers, and large-scale battery storage systems [2][4]. - The modules provide continuous drain current ranging from 50 A to 200 A, with low on-resistance values down to 12.1 mΩ, and a maximum operating junction temperature of +175 °C [4][5]. Design and Compatibility - The compact SOT-227 package allows these devices to serve as drop-in replacements for existing solutions, facilitating the adoption of new SiC technologies without the need for redesigning PCB layouts [3][4]. - The molded package offers electrical insulation up to 2500 V for one minute, which helps in reducing costs by eliminating the need for additional insulation between the component and heatsink [3]. Availability - Samples and production quantities of the new power modules are currently available, with lead times of 13 weeks [5].

Core Insights - Allegro MicroSystems has launched the AHV85003/AHV85043 chipset, expanding its Power-Thru™ isolated gate driver portfolio, which now includes a complete ecosystem for high-voltage silicon carbide (SiC) designs in AI data centers, electric vehicles, and clean energy systems [1][3] Group 1: Product Features - The new chipset simplifies power conversion design by eliminating the need for external isolated bias supplies, resulting in the industry's smallest solution footprint and reduced bill of materials (BOM) for achieving maximum power density in 800V systems [1] - Allegro's Power-Thru™ isolated gate drivers integrate signal and power across a single isolation barrier, reducing common-mode capacitance by up to 15 times and improving electromagnetic interference (EMI) performance by up to 20dB [2][7] - The expanded portfolio supports a multi-source SiC strategy, allowing designers to easily swap between SiC FETs from different vendors without redesigning their boards, with selectable gate-to-source voltages of 15V, 18V, and 20V [3] Group 2: Implementation Options - The AHV85311 integrated solution includes an isolation transformer for an all-in-one route to accelerate time-to-market, while the new AHV85003/AHV85043 chipset allows designers to optimize for cost and layout by selecting their own external transformer [4] - This dual offering provides customers with flexibility, whether they prefer the plug-and-play speed of an integrated solution or the granular control of a chipset, while maintaining high efficiency [5] Group 3: Company Overview - Allegro MicroSystems leverages over three decades of expertise in magnetic sensing and power ICs to enhance efficiency, performance, and sustainability across automotive, clean energy, and industrial automation sectors [6]

Core Insights - ROHM Semiconductor has commenced mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL packages, which provide approximately 39% improved thermal performance compared to conventional packages [1][3] - The new products are designed to meet the increasing demand for higher power density in applications such as AI servers and compact PV inverters while maintaining a low profile [2][3] Product Features - The SCT40xxDLL series reduces component footprint by approximately 26% and achieves a low profile of 2.3mm thickness, which is about half that of conventional packaged products [3] - The series supports a drain-source rated voltage of up to 750V, allowing for lower gate resistance and increased safety margin for surge voltages, contributing to reduced switching losses [3] - The lineup consists of six models with on-resistance ranging from 13mΩ to 65mΩ, with mass production starting in September 2025 [4][8] Applications - The new SiC MOSFETs are suitable for various applications, including power supplies for AI servers, data centers, PV inverters, and energy storage systems (ESS) [5] - The products are also applicable in consumer equipment for general power supplies [5] Brand and Technology - ROHM's EcoSiC brand focuses on silicon carbide (SiC) devices, which are recognized for their superior performance compared to traditional silicon [5] - The company has developed essential technologies for SiC evolution, including wafer fabrication, production processes, packaging, and quality control methods, establishing itself as a leading SiC supplier [5]

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Summary of the Status of the Power Electronics Industry 2025 Industry Overview - The report focuses on the **Power Electronics Industry**, providing insights into market forecasts, technology trends, and supply chain dynamics from 2024 to 2030 [19][21][24]. Key Market Insights - The power device market is projected to grow at a **CAGR of 8.7%**, reaching **$43.3 billion** by 2030, up from **$26.2 billion** in 2024 [24][79]. - Despite the overall growth, the market faced turbulence in 2024 due to **overcapacity** and high inventory levels, leading to a decline in revenues for many companies [75][93]. - The **Automotive & Mobility** sector remains the largest market segment, expected to grow at a **CAGR of 12.5%** from 2024 to 2030 [80]. Technology Trends - **Silicon MOSFETs** continue to dominate the market, but **SiC** and **GaN** technologies are gaining traction due to their efficiency and power density [81][88]. - The shift towards **higher voltage devices** is notable, with increasing demand for **1,200V** and **2.X kV** classes [91]. - Innovations in packaging and cooling technologies are enhancing the performance of power modules, with a trend towards **"module-on-cooler"** designs [91]. Supply Chain Dynamics - The report highlights a significant **shift in market shares** towards Chinese manufacturers, with companies like **CRMicro**, **Silan**, **BYD**, and **CRRC** entering the Top 20 power device suppliers [82][83]. - **Geopolitical tensions** and local protectionism are reshaping supply chain strategies, with companies focusing on **vertical integration** and **local manufacturing** [77][86]. - The **Top 20 power device suppliers** are expected to see significant changes by 2025, with increasing competition from Chinese firms [86]. Market Challenges - The industry is facing challenges such as **high inventory levels**, **price erosion**, and increased competition from Chinese manufacturers, which have led to layoffs and project delays among major players [44][120][121]. - The **SiC** market has experienced significant price drops, affecting margins and revenues, particularly in the automotive segment [97]. Future Outlook - The report emphasizes the need for companies to adapt their strategies to remain competitive, focusing on **cost-competitiveness**, **multisourcing**, and **diversification** beyond automotive applications [86]. - There is an anticipated increase in **mergers and acquisitions** as companies seek to strengthen their market positions [86]. Conclusion - The **Power Electronics Industry** is poised for growth despite current challenges, driven by demand in sectors such as **electric mobility**, **renewable energy**, and **industrial applications** [93]. The ongoing evolution in technology and supply chain dynamics will play a crucial role in shaping the future landscape of the industry [88][93].

Core Insights - ROHM Semiconductor has developed the DOT-247, a new 2-in-1 SiC molded module aimed at industrial applications such as PV inverters, UPS systems, and semiconductor relays [1][16] - The DOT-247 features a dual TO-247 structure that allows for larger chip integration, achieving lower on-resistance and reducing thermal resistance by approximately 15% and inductance by about 50% compared to conventional TO-247 solutions, resulting in a 2.3x higher power density in a half-bridge configuration [2][3] Product Features - The DOT-247 is available in two topologies: half-bridge and common-source, addressing the rising demand for multi-level circuits in PV inverters [3][4] - The module's design reduces the number of components and board space, facilitating circuit miniaturization compared to discrete solutions [4] Application Examples - The DOT-247 is suitable for various applications including PV inverters, semiconductor relays, UPS, ePTO, boost converters for fuel cell vehicles, AI servers, and EV charging stations [5] Sales Information - The DOT-247 will be available in OEM quantities starting September 2025, with AEC-Q101 qualified products scheduled for sample shipments in October 2025 [6] Comprehensive Support - ROHM provides extensive application-level support, including in-house motor testing equipment and various supporting materials such as simulations and thermal designs for quick evaluation and adoption of DOT-247 products [7] - An evaluation kit for double-pulse testing is available, with a kit for 3-phase inverters under preparation, and reference designs expected to be released from November 2025 [7] Design Models - SPICE models for the DOT-247 are available on the product page, with LTspice models for three-level NPC expected to be available starting October 2025 [8] EcoSiC™ Brand - EcoSiC is ROHM's brand for silicon carbide devices, which are recognized for their superior performance compared to silicon, with ROHM developing essential technologies for SiC evolution and maintaining an integrated production system [9]

Core Viewpoint - Vishay Intertechnology has introduced three new Gen 3 silicon carbide Schottky diodes designed for high voltage applications, featuring a compact SlimSMA HV package that enhances efficiency in power designs [1][2]. Group 1: Product Features - The new diodes include the 1 A VS-3C01EJ12-M3 and the 2 A VS-3C02EJ07-M3 and VS-3C02EJ12-M3, which offer low capacitive charge and a minimum creepage distance of 3.2 mm [1][2]. - These devices maintain a low capacitive charge down to 7.2 nC regardless of temperature, resulting in faster switching speeds and reduced power losses [3]. - The MPS structure of the diodes allows for a reduced forward voltage drop down to 1.30 V, contributing to improved efficiency [3]. Group 2: Applications - Typical applications for these diodes include bootstrap, anti-parallel, and PFC diodes for DC/DC and AC/DC converters in server power supplies, energy generation and storage systems, industrial drives and tools, and X-ray generators [4]. - The devices are designed to operate at high temperatures of up to +175 °C, making them suitable for demanding environments [4]. Group 3: Compliance and Availability - The diodes are RoHS-compliant and halogen-free, with a Moisture Sensitivity Level of 1 according to J-STD-020 [5]. - Samples and production quantities of the new SiC diodes are currently available, with lead times of 14 weeks [8]. Group 4: Company Overview - Vishay Intertechnology is recognized as one of the largest manufacturers of discrete semiconductors and passive electronic components, serving various markets including automotive, industrial, computing, and medical [9].

Core Insights - Aehr Test Systems' stock increased by 35.5% in June due to positive developments in targeted end markets, indicating potential for revenue diversification and growth [1] Revenue Sources - The company primarily operates in the silicon carbide (SiC) wafer-level burn-in (WLBI) market, which accounted for 90% of its revenue in 2024 [2] - The electric vehicle (EV) market is a key driver for Aehr's SiC WLBI solutions, but high interest rates are negatively impacting EV sales [3] Market Challenges - Key customers like ON Semiconductor are facing sales declines, with expectations of a 16.5% drop in 2025, necessitating Aehr to explore other markets to mitigate weaknesses in its core business [3] New Revenue Streams - Aehr's revenue from SiC WLBI is projected to drop to less than 40%, while artificial intelligence (AI) processor burn-in is expected to represent over 35% of its business within the first year [4] - In the third quarter, four customers contributed to 10% of Aehr's revenue, with three coming from new markets [4] Positive Market Trends - Continued momentum in AI and GaN WLBI spending was noted, particularly following Nvidia's strong earnings report and its partnership with Navitas Semiconductor, which may lead to potential customer relationships for Aehr [6] Future Outlook - The growth of alternative revenue streams is beneficial for Aehr's investment case, with expectations for improved demand in SiC WLBI as EV investments rise [8] - The company's revenue and earnings remain cyclical, but diversification into new end markets is reducing reliance on EV spending, positively impacting stock performance [8]

Core Viewpoint - Navitas Semiconductor has announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation to enhance the production of 200mm GaN-on-silicon technology, aiming to strengthen supply chains, drive innovation, and improve cost efficiency in various markets including AI data centers, electric vehicles (EVs), solar energy, and home appliances [1][6]. Company Overview - Navitas Semiconductor specializes in next-generation power semiconductors, particularly GaNFast™ gallium nitride and GeneSiC™ silicon carbide technologies, and has been operational for 10 years since its founding in 2014 [8]. - Powerchip Semiconductor Manufacturing Corporation is a Taiwanese foundry that develops and manufactures advanced semiconductor components, operating multiple wafer fabs since its establishment in 1994 [7]. Strategic Partnership - The partnership with Powerchip will utilize its 200mm fabrication capabilities at Fab 8B in Taiwan, which has been operational since 2019 and supports high-volume manufacturing processes for GaN [2]. - Powerchip's advanced 180nm CMOS process will enable the production of smaller, more efficient devices, enhancing performance and cost-effectiveness [3]. Product Development and Market Demand - Navitas' GaN portfolio will include voltage ratings from 100V to 650V, catering to the increasing demand for GaN in 48V infrastructure, particularly for hyper-scale AI data centers and EVs [4]. - Initial device qualification is anticipated in Q4 2025, with production of the 100V family expected to commence in the first half of 2026 [4]. Recent Collaborations and Innovations - Navitas has recently collaborated with NVIDIA to support GaN and SiC technologies for high-voltage direct current (HVDC) architectures and has partnered with Enphase and Changan Automobile for integrating GaN technology into their products [5]. Future Outlook - The partnership is expected to drive sustained progress in product performance, technological evolution, and cost efficiency, positioning both companies for future growth in the GaN market [6].