Group 1 - The Shenzhen Comprehensive Platform has achieved significant breakthroughs in substrate and epitaxy technologies, including advancements in SiC planar and trench gate technologies, as well as GaN epitaxy and device technologies [1][2] - The platform has successfully implemented silicon carbide laser stripping technology, achieving a total loss of less than 75 microns for 8-inch wafers, with a cutting time of 20 minutes and a cost reduction of 26%, leading to international leading overall performance [1] - The platform has developed the first multifunctional wide bandgap materials and high-voltage power device characterization system, utilizing domestic materials to produce the first aluminum nitride/ aluminum gallium nitride HMET device in China [1] Group 2 - Power semiconductors, represented by SiC and GaN, are crucial materials for modern power electronics and RF devices, with significant potential in high-voltage, high-frequency, and high-power applications [2] - Since 2021, Shenzhen has been tasked with constructing the National Third Generation Semiconductor Technology Innovation Center, which includes the establishment of the Shenzhen Pingshan Laboratory as the operational entity [2] - The Shenzhen Comprehensive Platform is the world's first open shared platform for 8-inch advanced power semiconductors, equipped with comprehensive R&D and industrialization capabilities [2] Group 3 - The ongoing 2025 Bay Area Semiconductor Industry Ecosystem Expo serves as an important platform for industry organizations to announce new achievements [3] - At the expo, the Shenzhen Comprehensive Platform signed cooperation agreements with 14 industry chain partners in various fields, enhancing the industrial ecosystem and accelerating the transformation of technological achievements [3] - The signing and unveiling of the National Third Generation Semiconductor Technology Innovation Center EDA Design Public Platform marks its official launch [3]