存储器及其形成方法

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中芯国际申请存储器及其形成方法专利,便于区分浮栅结构在写入时的状态
Sou Hu Cai Jing· 2025-05-06 01:53
Core Viewpoint - Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to a new type of memory and its formation method, indicating ongoing innovation in the semiconductor industry [1]. Group 1: Patent Application - SMIC has filed a patent titled "Memory and Its Formation Method" with publication number CN119922914A, with the application date being October 2023 [1]. - The patent describes a memory structure that includes a substrate, floating gate structure, and selection gate structure, which enhances the efficiency of charge writing into the floating gate [1]. Group 2: Company Overview - SMIC was established in 2000 and is located in Shanghai, primarily engaged in the manufacturing of computers, communications, and other electronic devices [2]. - The company has a registered capital of 244 million USD and has made investments in four enterprises, participated in 120 bidding projects, and holds 5000 patent records [2].