Group 1 - The core viewpoint of the news is that three subsidiaries of SMIC have applied for a patent related to semiconductor structures, which aims to improve device performance and reliability through innovative design [1][2][3] Group 2 - SMIC International Integrated Circuit Manufacturing (Tianjin) Co., Ltd. was established in 2003, has a registered capital of 1.29 billion, and has participated in 104 bidding projects with 387 patent records [1] - SMIC North Integrated Circuit Manufacturing (Beijing) Co., Ltd. was established in 2013, has a registered capital of 480 million, and has participated in 51 bidding projects with 137 patent records [2] - SMIC International Integrated Circuit Manufacturing (Shanghai) Co., Ltd. was established in 2000, has a registered capital of 244 million, has invested in 4 companies, participated in 127 bidding projects, and holds 5000 patent records [2]

Group 1 - The core viewpoint of the news is that Hefei Jinghe Integrated Circuit Co., Ltd. has applied for a patent for a method of preparing trench MOSFET devices, indicating its focus on innovation in semiconductor technology [1] - The patent application was published under the number CN120529608A, with the application date being July 2025 [1] - The patent describes a method that involves forming a trench in the substrate, creating a first gate dielectric layer, and stacking a first gate electrode layer, followed by a second gate dielectric layer and a second gate electrode layer [1] Group 2 - Hefei Jinghe Integrated Circuit Co., Ltd. was established in 2015 and is located in Hefei City, primarily engaged in the manufacturing of computers, communications, and other electronic devices [2] - The company has a registered capital of approximately 200.61 million RMB [2] - The company has made investments in 9 enterprises, participated in 630 bidding projects, and holds 1200 patent records along with 41 trademark records [2]

Group 1 - The core viewpoint of the news is that Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to semiconductor structures and their formation methods, indicating ongoing innovation in the semiconductor industry [1][3] - The patent application, published as CN120456589A, was filed on February 2024 and describes a semiconductor structure that includes a substrate with two regions having different device operating voltages [1] - The structure features fins located on the substrate, an isolation layer surrounding the fins, and two gate dielectric layers with different thicknesses, showcasing advancements in semiconductor technology [1] Group 2 - SMIC was established in 2000 and is based in Shanghai, primarily engaged in the manufacturing of computers, communications, and other electronic devices [2] - The company has a registered capital of 244 million USD and has made investments in four enterprises, participated in 127 bidding projects, and holds 5000 patent records [2] - Additionally, SMIC has 150 trademark records and possesses 451 administrative licenses, reflecting its extensive operational footprint in the semiconductor industry [2]

Group 1 - Jiangsu Weidao Nano Technology Co., Ltd. applied for a patent titled "A semiconductor production equipment and its control method, control device," with publication number CN120443149A, and the application date is May 2025 [1] - The patent describes a control method that includes obtaining the actual film thickness d of a substrate, calculating the difference between the actual film thickness d and the designed film thickness d0 to obtain the actual film thickness difference △d, and obtaining the actual temperature T in the reaction chamber [1] - The method further involves calculating the temperature difference △T, determining the first film thickness difference △d1 influenced by temperature, and calculating the second film thickness difference △d2 to adjust the flow rate of process gas for the next production cycle [1] Group 2 - Jiangsu Weidao Nano Technology Co., Ltd. was established in 2015 and is located in Wuxi City, primarily engaged in specialized equipment manufacturing [2] - The company has a registered capital of 457.678129 million RMB and has made investments in 2 enterprises, participated in 47 bidding projects, and holds 89 trademark records and 527 patent records [2] - Additionally, the company possesses 68 administrative licenses [2]

Group 1 - Company Name: Semiconductor Manufacturing International Corporation (SMIC) has filed a patent for a semiconductor structure and its formation method, with publication number CN120413548A, applied on January 2024 [1] - The patent describes a method that includes forming a first part with at least a first metal layer, a dielectric layer, and a first interconnect structure, and a second part with a device structure, a second metal layer, and a second interconnect structure [1] - The bonding of the first and second parts allows for overlapping projection areas of the first and second metal layers, ensuring electrical connection between the first and second interconnect structures [1] Group 2 - SMIC Beijing was established in 2002 with a registered capital of 100 million USD, focusing on manufacturing in the computer, communication, and other electronic device sectors [2] - SMIC Shanghai was founded in 2000 with a registered capital of 244 million USD, also engaged in the same manufacturing sectors [2] - SMIC Beijing has participated in 52 bidding projects and holds 5000 patent records, while SMIC Shanghai has been involved in 127 bidding projects and also holds 5000 patent records [2]

Core Viewpoint - Semiconductor manufacturing companies, specifically SMIC, are advancing their technology by applying for a new patent related to mask layout design and preparation methods, which aims to reduce process complexity and production costs [1][2]. Group 1: Patent Application - SMIC has applied for a patent titled "Mask Layout Design and Mask Preparation Method, and Semiconductor Structure Formation Method," with publication number CN120386136A, filed on January 2024 [1]. - The patent describes a method that includes generating a first transparent layout and a second transparent layout, which helps in reducing the complexity of the manufacturing process [1]. Group 2: Company Overview - SMIC (Beijing) was established in 2002, focusing on the manufacturing of computers, communications, and other electronic devices, with a registered capital of 100 million USD [2]. - SMIC (Shanghai) was founded in 2000, also in the same industry, with a registered capital of 244 million USD [2]. - Both companies have significant engagement in the market, with SMIC (Beijing) participating in 52 bidding projects and SMIC (Shanghai) in 127 projects, alongside holding 5000 patent records each [2].

Core Viewpoint - Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to semiconductor structures and their formation methods, indicating ongoing innovation in the semiconductor industry [1]. Company Summary - SMIC was established in 2000 and is located in Shanghai, primarily engaged in the manufacturing of computers, communications, and other electronic devices [1]. - The company has a registered capital of 244 million USD [1]. - SMIC has made investments in 4 companies and participated in 127 bidding projects [1]. - The company holds 150 trademark records and 5000 patent records, along with 451 administrative licenses [1]. Patent Details - The patent application, titled "Semiconductor Structure and Its Formation Method," was filed on January 2024, with the publication number CN120388891A [1]. - The semiconductor structure includes a semiconductor substrate with two regions: one with a silicon layer and the other with a silicon-germanium layer, both surfaces being flush [1]. - Fins are located in both regions, with equal heights, where the fins in the first region consist of part of the substrate and the silicon layer, while those in the second region consist of part of the substrate and the silicon-germanium layer [1].

Group 1 - Company "SMIC International Integrated Circuit Manufacturing (Beijing) Co., Ltd." applied for a patent titled "Storage Unit Structure and Method for Forming Storage Unit Structure" with publication number CN120379260A, filed on January 2024 [1] - The patent abstract describes a storage unit structure that includes a substrate, bit line structure, source line structure, and various gate structures, which facilitate vertical electron transport channels and reduce the lateral dimensions of the storage unit [1] Group 2 - "SMIC International Integrated Circuit Manufacturing (Beijing) Co., Ltd." was established in 2002, located in Beijing, with a registered capital of 100 million USD, and has participated in 52 bidding projects and holds 5000 patent records [2] - "SMIC International Integrated Circuit Manufacturing (Shanghai) Co., Ltd." was founded in 2000, located in Shanghai, with a registered capital of 244 million USD, has invested in 4 companies, participated in 127 bidding projects, and holds 150 trademark records along with 5000 patent records [2]

Group 1 - Company "SMIC International Integrated Circuit Manufacturing (Beijing) Co., Ltd." applied for a patent titled "Memory Structure and Its Formation Method" with publication number CN120379259A, filed on January 2024 [1] - The patent describes a memory structure that includes a substrate, a channel structure made of transition metal sulfides, and a floating gate made of graphene material, which enhances performance and reduces storage area [1] - The use of transition metal sulfides as channel material and graphene for the floating gate mitigates short-channel effects and leakage issues, improving the overall performance of the memory structure [1] Group 2 - "SMIC International Integrated Circuit Manufacturing (Beijing) Co., Ltd." was established in 2002 with a registered capital of 100 million USD, focusing on the manufacturing of computers, communications, and other electronic devices [2] - "SMIC International Integrated Circuit Manufacturing (Shanghai) Co., Ltd." was founded in 2000 with a registered capital of 244 million USD, also engaged in the same industry [2] - The Beijing subsidiary has participated in 52 bidding projects and holds 5000 patent records, while the Shanghai subsidiary has engaged in 127 bidding projects and also possesses 5000 patent records [2]

Core Viewpoint - Semiconductor manufacturing companies, specifically SMIC, are advancing their technology by applying for a new patent related to semiconductor structure formation, which aims to improve product yield and reduce sensitivity to environmental impurities [1][2]. Group 1: Patent Application - SMIC has applied for a patent titled "Method for Forming Semiconductor Structure," with publication number CN120261287A, filed on January 2024 [1]. - The patent describes a process that includes forming a silicon layer on a substrate, followed by a metal layer, and involves multiple heat treatments and acid washes to create a metal silicide layer [1]. - The new method enhances the growth of metal silicide by minimizing the impact of environmental factors, thus improving product yield [1]. Group 2: Company Overview - SMIC Beijing was established in 2002, focusing on the manufacturing of computers, communications, and other electronic devices, with a registered capital of 100 million USD [2]. - SMIC Shanghai was founded in 2000, also specializing in similar manufacturing sectors, with a registered capital of 244 million USD [2]. - Both companies have significant patent portfolios, with each holding around 5,000 patents, and have participated in numerous bidding projects [2].