金融界2025年8月25日消息，国家知识产权局信息显示，中芯国际集成电路制造（天津）有限公司、中 芯北方集成电路制造（北京）有限公司、中芯国际集成电路制造（上海）有限公司申请一项名为"一种 半导体结构、形成方法、半导体器件及电子装置"的专利，公开号CN120527324A，申请日期为2024年 02月。 中芯北方集成电路制造（北京）有限公司，成立于2013年，位于北京市，是一家以从事计算机、通信和 其他电子设备制造业为主的企业。企业注册资本480000万美元。通过天眼查大数据分析，中芯北方集成 电路制造（北京）有限公司参与招投标项目51次，专利信息137条，此外企业还拥有行政许可448个。 中芯国际集成电路制造（上海）有限公司，成立于2000年，位于上海市，是一家以从事计算机、通信和 其他电子设备制造业为主的企业。企业注册资本244000万美元。通过天眼查大数据分析，中芯国际集成 电路制造（上海）有限公司共对外投资了4家企业，参与招投标项目127次，财产线索方面有商标信息 150条，专利信息5000条，此外企业还拥有行政许可446个。 来源：金融界 专利摘要显示，本申请公开了一种半导体结构、形成方法、半导体器 ...

金融界2025年8月23日消息，国家知识产权局信息显示，合肥晶合集成电路股份有限公司申请一项名 为"一种沟槽型MOSFET器件的制备方法及MOSFET器件"的专利，公开号CN120529608A，申请日期为 2025年07月。 专利摘要显示，本申请公开了一种沟槽型MOSFET器件的制备方法，包括：以衬底上表面的图形化外延 层作为掩膜，在衬底中形成沟槽，并去除外延层；在沟槽底部、侧壁以及衬底上表面上方形成第一栅介 质层和层叠在第一栅介质层上的第一栅极层，其中，第一栅极层的厚度满足第一厚度阈值条件；去除沟 槽底部和衬底上表面的层叠在第一栅介质层上的第一栅极层；在沟槽底部的第一栅介质层上方沉积第二 栅介质层；在第二栅介质层上方沉积第二栅极层，第二栅极层的上表面与衬底上方的第一栅介质层的上 表面齐平，其中，第二栅极层的厚度满足第二厚度阈值条件。 天眼查资料显示，合肥晶合集成电路股份有限公司，成立于2015年，位于合肥市，是一家以从事计算 机、通信和其他电子设备制造业为主的企业。企业注册资本200613.5157万人民币。通过天眼查大数据 分析，合肥晶合集成电路股份有限公司共对外投资了9家企业，参与招投标项目630次， ...

天眼查资料显示，中芯国际集成电路制造（上海）有限公司，成立于2000年，位于上海市，是一家以从 事计算机、通信和其他电子设备制造业为主的企业。企业注册资本244000万美元。通过天眼查大数据分 析，中芯国际集成电路制造（上海）有限公司共对外投资了4家企业，参与招投标项目127次，财产线索 方面有商标信息150条，专利信息5000条，此外企业还拥有行政许可451个。 来源：金融界 专利摘要显示，一种半导体结构及其形成方法，半导体结构包括：衬底，衬底包括第一区和第二区，第 一区的器件工作电压小于第二区的器件工作电压；鳍部，分立于第一区和第二区的衬底上；隔离层，位 于衬底上且围绕鳍部的部分侧壁，被隔离层暴露的鳍部作为有效鳍部，第一区的有效鳍部高度大于第二 区的有效鳍部高度；第一栅介质层，位于第二区的有效鳍部上；第二栅介质层，位于第一区的有效鳍部 上，第二栅介质层的厚度小于第一栅介质层的厚度；栅极层，横跨有效鳍部且覆盖第一栅介质层和第二 栅介质层，栅极层覆盖有效鳍部的部分顶部和部分侧壁。 金融界2025年8月9日消息，国家知识产权局信息显示，中芯国际集成电路制造（上海）有限公司申请一 项名为"半导体结构及其形成方法" ...

Group 1 - Jiangsu Weidao Nano Technology Co., Ltd. applied for a patent titled "A semiconductor production equipment and its control method, control device," with publication number CN120443149A, and the application date is May 2025 [1] - The patent describes a control method that includes obtaining the actual film thickness d of a substrate, calculating the difference between the actual film thickness d and the designed film thickness d0 to obtain the actual film thickness difference △d, and obtaining the actual temperature T in the reaction chamber [1] - The method further involves calculating the temperature difference △T, determining the first film thickness difference △d1 influenced by temperature, and calculating the second film thickness difference △d2 to adjust the flow rate of process gas for the next production cycle [1] Group 2 - Jiangsu Weidao Nano Technology Co., Ltd. was established in 2015 and is located in Wuxi City, primarily engaged in specialized equipment manufacturing [2] - The company has a registered capital of 457.678129 million RMB and has made investments in 2 enterprises, participated in 47 bidding projects, and holds 89 trademark records and 527 patent records [2] - Additionally, the company possesses 68 administrative licenses [2]

Group 1 - Company Name: Semiconductor Manufacturing International Corporation (SMIC) has filed a patent for a semiconductor structure and its formation method, with publication number CN120413548A, applied on January 2024 [1] - The patent describes a method that includes forming a first part with at least a first metal layer, a dielectric layer, and a first interconnect structure, and a second part with a device structure, a second metal layer, and a second interconnect structure [1] - The bonding of the first and second parts allows for overlapping projection areas of the first and second metal layers, ensuring electrical connection between the first and second interconnect structures [1] Group 2 - SMIC Beijing was established in 2002 with a registered capital of 100 million USD, focusing on manufacturing in the computer, communication, and other electronic device sectors [2] - SMIC Shanghai was founded in 2000 with a registered capital of 244 million USD, also engaged in the same manufacturing sectors [2] - SMIC Beijing has participated in 52 bidding projects and holds 5000 patent records, while SMIC Shanghai has been involved in 127 bidding projects and also holds 5000 patent records [2]

Group 1 - Company "SMIC International Integrated Circuit Manufacturing (Beijing) Co., Ltd." applied for a patent titled "Storage Unit Structure and Method for Forming Storage Unit Structure" with publication number CN120379260A, filed on January 2024 [1] - The patent abstract describes a storage unit structure that includes a substrate, bit line structure, source line structure, and various gate structures, which facilitate vertical electron transport channels and reduce the lateral dimensions of the storage unit [1] Group 2 - "SMIC International Integrated Circuit Manufacturing (Beijing) Co., Ltd." was established in 2002, located in Beijing, with a registered capital of 100 million USD, and has participated in 52 bidding projects and holds 5000 patent records [2] - "SMIC International Integrated Circuit Manufacturing (Shanghai) Co., Ltd." was founded in 2000, located in Shanghai, with a registered capital of 244 million USD, has invested in 4 companies, participated in 127 bidding projects, and holds 150 trademark records along with 5000 patent records [2]

中芯国际集成电路制造(上海)有限公司，成立于2000年，位于上海市，是一家以从事计算机、通信和其 他电子设备制造业为主的企业。企业注册资本244000万美元。通过天眼查大数据分析，中芯国际集成电 路制造(上海)有限公司共对外投资了4家企业，参与招投标项目127次，财产线索方面有商标信息150 条，专利信息5000条，此外企业还拥有行政许可451个。 来源：金融界 专利摘要显示，一种存储器结构及其形成方法，其中存储器结构包括：衬底；位于衬底上的沟道结构， 所述沟道结构包括位线区以及源线区，所述沟道结构的材料包括过渡金属硫化物；位于所述源线区上的 擦除栅、位于所述源线区上的浮栅、位于所述浮栅上的控制栅结构、位于所述源线区上的字线栅，所述 浮栅位于所述擦除栅和所述字线栅之间，所述浮栅的材料包括石墨烯材料；位于所述位线区上的位线。 采用过渡金属硫化物作为沟道材料，以及采用石墨烯材料作为浮栅，减小了由于沟道长度缩短带来的短 沟道效应、以及沟道和浮栅之间的漏电问题，提高了存储器结构的性能以及降低了存储面积。 天眼查资料显示，中芯国际集成电路制造(北京)有限公司，成立于2002年，位于北京市，是一家以从事 计算机、通信和其 ...

Core Viewpoint - Semiconductor manufacturing companies, specifically SMIC, are advancing their technology by applying for a new patent related to semiconductor structure formation, which aims to improve product yield and reduce sensitivity to environmental impurities [1][2]. Group 1: Patent Application - SMIC has applied for a patent titled "Method for Forming Semiconductor Structure," with publication number CN120261287A, filed on January 2024 [1]. - The patent describes a process that includes forming a silicon layer on a substrate, followed by a metal layer, and involves multiple heat treatments and acid washes to create a metal silicide layer [1]. - The new method enhances the growth of metal silicide by minimizing the impact of environmental factors, thus improving product yield [1]. Group 2: Company Overview - SMIC Beijing was established in 2002, focusing on the manufacturing of computers, communications, and other electronic devices, with a registered capital of 100 million USD [2]. - SMIC Shanghai was founded in 2000, also specializing in similar manufacturing sectors, with a registered capital of 244 million USD [2]. - Both companies have significant patent portfolios, with each holding around 5,000 patents, and have participated in numerous bidding projects [2].

Core Viewpoint - Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to a new "anti-fuse structure and its formation method," indicating ongoing innovation in semiconductor technology [1]. Company Overview - SMIC was established in 2000 and is located in Shanghai, primarily engaged in the manufacturing of computers, communications, and other electronic devices [2]. - The company has a registered capital of 244 million USD and has made investments in four enterprises, participated in 127 bidding projects, and holds 150 trademark records and 5,000 patent records [2].

Core Insights - Semiconductor manufacturing companies in China, specifically SMIC's subsidiaries, have applied for a patent related to a testing device and method for IGBT wafers, which aims to enhance testing efficiency and accuracy [1][3] Company Overview - SMIC International Integrated Circuit Manufacturing (Tianjin) Co., Ltd. was established in 2003, located in Tianjin, with a registered capital of 129 million USD. The company has participated in 104 bidding projects and holds 385 patents [2] - SMIC North Integrated Circuit Manufacturing (Beijing) Co., Ltd. was founded in 2013, based in Beijing, with a registered capital of 480 million USD. It has engaged in 45 bidding projects and possesses 133 patents [2] - SMIC International Integrated Circuit Manufacturing (Shanghai) Co., Ltd. was established in 2000, located in Shanghai, with a registered capital of 244 million USD. The company has invested in 4 enterprises, participated in 127 bidding projects, and holds 5000 patents [2]