Core Viewpoint - The article discusses advancements in GaN (Gallium Nitride) technology, particularly focusing on the development of 300mm GaN substrates and their implications for power electronics applications, highlighting collaborations and innovations in the semiconductor industry [2][5][6]. Group 1: GaN Technology Developments - Shin-Etsu Chemical announced the achievement of over 650V breakdown voltage using a 5μm GaN HEMT structure on a 300mm QST substrate, marking it as the highest breakdown voltage globally on such substrates [2]. - The QST substrate, developed by Qromis, is specifically designed for GaN growth, and Shin-Etsu has begun large-scale production of 300mm QST substrates after initial collaborations [3][4]. - imec has initiated a 300mm GaN project, collaborating with major industry players to develop GaN epitaxy growth technology and processes for low and high voltage applications [5][6]. Group 2: Industry Collaborations and Ecosystem - imec's 300mm GaN project includes partnerships with AIXTRON, GlobalFoundries, KLA Corporation, Synopsys, and Veeco, aiming to innovate in GaN power electronics [5][7]. - The transition to 300mm wafers is expected to enhance production scale and reduce manufacturing costs, facilitating the development of advanced GaN power devices [6][7]. - Infineon has successfully developed the first 300mm power GaN wafer technology, leveraging existing silicon wafer manufacturing infrastructure to reduce costs and increase production efficiency [7][8]. Group 3: Market Implications and Future Prospects - The larger wafer size allows for the production of double the number of power integrated circuits per wafer, significantly lowering the cost per chip, which is beneficial for applications in electric vehicles, solar inverters, and AI processors [8][9]. - Infineon plans to showcase its new 300mm GaN production capabilities at the upcoming Munich Electronics Fair, indicating a strong market push for GaN technology [8]. - The article emphasizes the importance of a robust ecosystem for the successful development of advanced GaN power electronic devices, highlighting the need for close integration between design, epitaxy, process integration, and applications [7].