公众号记得加星标⭐️，第一时间看推送不会错过。 （lateral p-GaN HEMT）基准技术平台。目前，围绕 p 型氮化镓刻蚀和欧姆接触形成的工艺模块研发工作正在推进中。后续，项目将进一步瞄准高压应用场景：针 对 650 伏特及以上的高压需求，研发工作将采用 300 毫米半规格衬底，以及与 CMOS 兼容的 QST工程衬底（一种以多晶氮化铝（AlN）为核心的材料）。在整个研 发过程中，300 毫米晶圆的翘曲度控制及其机械强度是需要重点关注的核心问题。 imec 在成功完成 300 毫米晶圆处理测试与掩模版研发后，正式启动了此次 300 毫米氮化镓项目，并计划于 2025 年底前在其 300 毫米洁净室中全面部署相关技术能 力。斯特凡・德库泰尔补充道："300 毫米氮化镓技术研发的成功，还取决于能否构建一个稳健的生态系统，并联合推动从 300 毫米氮化镓生长、工艺集成到封装解 决方案的全链条创新。因此，我们非常荣幸地宣布 AIXTRON、格芯、科磊、新思科技和维易科成为我们 300 毫米氮化镓开放式研发项目的首批合作伙伴，也期待 未来能有更多伙伴加入。因为先进氮化镓电力电子器件的研发，需要设计、外延、工艺集 ...

Core Viewpoint - Zhuhai Ga Future Technology Co., Ltd. has completed a billion-level B++ round of financing, which will primarily be used for the development of high-voltage/high-power products, supply chain construction, and business expansion [1] Group 1: Company Overview - Ga Future was established in October 2020 and focuses on the research and application of gallium nitride (GaN) power devices, having mass-produced over 40 product models covering applications from 30W to 10kW at voltage levels of 650V and 900V [1] - The company has already achieved reliability verification for its first product based on a third-generation chip design platform and has begun mass production and shipment [1][4] Group 2: Product Development and Technology - The third-generation products have seen a 40% improvement in figure of merit compared to the first generation, indicating significant advancements in device performance [4] - Ga Future has optimized its production processes by forming a dedicated team to iterate on core processes at wafer fabs, enhancing production yield and efficiency [4] - The company has independently developed a bidirectional device that is currently in mass production, along with a GaN device integrated with a driver that has seen significant shipment volumes [5][7] Group 3: Cost Reduction and Market Strategy - Ga Future has achieved a 50% reduction in production costs compared to three years ago, with the manufacturing cost of its GaN devices now lower than that of comparable silicon-based devices [7] - The company aims to balance its focus between consumer electronics and industrial markets, with industrial products expected to contribute over half of its sales revenue in 2024 [10] - The overall gross margin for Ga Future is currently between 15% and 20%, with industrial products yielding higher margins than consumer products [10] Group 4: Future Plans and Management - The company plans to invest in production and supply chain construction to expand capacity and aims to complete all third-generation product iterations by 2026, targeting a 100% increase in sales revenue [12] - To adapt to rapid growth, Ga Future has established a rotating CEO system to focus on business development and management improvements [11]

Group 1 - The core viewpoint of the report is that Gallium Nitride (GaN) is the most promising power semiconductor in consumer electronics, electric vehicles, and renewable energy sectors, with Innoscience (02577) being the largest GaN IDM company globally [1] - The report highlights that Innoscience has a significant advantage as a Chinese company, given that China is the largest potential GaN market, producing approximately 55% of the world's smartphones, which will rapidly adopt GaN-based fast charging technology [1] - Innoscience plans to increase its production capacity sixfold by 2028, which is expected to significantly reduce costs and drive industry adoption [1] Group 2 - The report predicts that Innoscience will achieve a gross margin of 21% by the second half of 2025, nearing breakeven in 2026, and generating positive cash flow by 2027, with a projected net profit of 685 million RMB [1]

Group 1: Market Overview - The Hong Kong stock market opened lower but rebounded, with the Hang Seng Index closing at 24,627.25 points, up 119.44 points, or 0.49% [1] - The Hang Seng Tech Index also rose, closing at 5,447.62 points, up 50.22 points, or 0.93% [1] - Gold stocks in Hong Kong surged, with Shandong Gold and Chifeng Gold rising over 9% due to increased attractiveness of gold amid Fed rate cut expectations [1][16] Group 2: Company Performance - Xia Bo Xia Bo - Xia Bo Xia Bo, known as the "first rotating hot pot stock," announced a projected revenue of approximately RMB 1.9 billion for the first half of the year, a year-on-year decrease of about 18.9% [3] - The company expects a net loss between RMB 80 million to 100 million, with a year-on-year decline in losses of approximately 63.2% to 70.5% [3] - Since 2021, Xia Bo Xia Bo has faced continuous losses, accumulating a total loss of approximately RMB 1.326 billion from 2021 to 2024 [4] Group 3: Stock Performance - Xia Bo Xia Bo - Xia Bo Xia Bo's stock price fell nearly 4% in early trading, with a cumulative decline of over 92% since its peak in January 2023, leaving a market capitalization of only HKD 815 million [5] - The stock price was reported at HKD 0.75 per share, reflecting a drop of 3.85% [5][6] Group 4: Gold Market Dynamics - The recent surge in gold prices, with London gold spot prices rising over 2% to USD 3,362.64 per ounce, has been attributed to increasing expectations of a Fed rate cut [16] - This rise in gold prices has led to a significant increase in the stock prices of gold companies in Hong Kong, with several stocks rising over 8% [15][16] Group 5: InnoTek's Market Activity - InnoTek's stock price increased by over 40% in two trading days, driven by a partnership with NVIDIA to promote an 800 VDC power architecture for AI data centers [9][12] - The stock price reached HKD 62.65, with a market capitalization of HKD 56.03 billion [11]

Core Viewpoint - InnoPhase has officially announced a partnership with NVIDIA to promote the large-scale implementation of the 800VDC power architecture in AI data centers, which offers significant advantages over traditional power systems [1][2] Group 1: Partnership with NVIDIA - The collaboration aims to leverage NVIDIA's new generation 800VDC power system, designed for efficient power supply in megawatt-level computing infrastructure, enhancing system efficiency, thermal loss, and reliability [1] - The partnership is expected to enable AI computing power to increase by 100 to 1000 times, marking a significant advancement in AI data center capabilities [1] Group 2: Technological Advancements - InnoPhase's third-generation GaN devices provide a comprehensive power solution from 800V input to GPU terminals, covering a voltage range from 15V to 1200V, which is crucial for the 800VDC architecture [1] - The integration of GaN technology with NVIDIA's 800VDC power architecture is projected to facilitate a transition from kilowatt to megawatt capabilities in AI data centers, promoting a more efficient, reliable, and environmentally friendly AI computing era [1] Group 3: Market Impact - Following the announcement, InnoPhase's stock price surged by 30.91%, reaching HKD 57.6, with a total market capitalization of HKD 51.517 billion [2] - In addition to the partnership with NVIDIA, InnoPhase has established a joint laboratory with a leading automotive electronics supplier to develop advanced power electronics systems for electric vehicles, leveraging GaN technology [2]

Core Insights - In a significant development, the domestic GaN leader, InnoScience, has entered into a partnership with NVIDIA to promote the large-scale implementation of the 800VDC power architecture in AI data centers, leading to a surge in its stock price by over 60% during trading on August 1 [1][3]. Company Summary - InnoScience's stock closed at 57.60 HKD per share, reflecting a 30.91% increase on the day of the announcement [1]. - The collaboration aims to leverage InnoScience's third-generation GaN devices, which offer high frequency, efficiency, and power density, to provide a comprehensive GaN power solution for NVIDIA's 800VDC architecture [3]. Industry Summary - The 800VDC architecture is designed to enhance efficiency, reduce thermal losses, and improve reliability compared to traditional 54V systems, potentially increasing AI computing power by 100 to 1000 times [3]. - The new architecture simplifies the power distribution process in data centers by directly converting 13.8 kV AC power to 800 V HVDC, minimizing energy losses and system complexity [6]. - By 2027, the 800 V HVDC data centers are expected to be fully operational alongside NVIDIA's Kyber rack-level systems, addressing the growing computational demands of AI workloads while reducing total cost of ownership (TCO) by up to 30% [6].

Core Viewpoint - The article highlights the significant collaboration between InnoScience and NVIDIA, focusing on the implementation of the 800VDC power architecture in AI data centers, which is expected to enhance efficiency and performance in AI computing [3]. Group 1: Collaboration and Market Impact - InnoScience's stock surged by over 60% during trading on August 1, reaching a new high since its listing, closing up 30.91% at HKD 57.60 per share following the announcement of the partnership with NVIDIA [1][3]. - The collaboration aims to promote the large-scale deployment of the 800VDC power architecture, which is designed for high-efficiency power supply in megawatt-level computing infrastructures [3]. Group 2: Technical Advantages of 800VDC Architecture - The 800VDC architecture offers significant advantages over traditional 54V systems, including improved system efficiency, reduced thermal losses, and enhanced reliability, enabling a 100 to 1000 times increase in AI computing power [3][5]. - InnoScience's third-generation GaN devices provide a comprehensive power solution from 800V input to GPU terminals, covering a voltage range from 15V to 1200V, facilitating the integration of GaN technology with NVIDIA's architecture [3]. Group 3: Future Prospects and Cost Efficiency - The 800V HVDC architecture is positioned as a future-proof solution for AI infrastructure, with full-scale production expected by 2027, ensuring scalability for increasingly demanding AI workloads [5]. - The implementation of this architecture could reduce the total cost of ownership (TCO) by up to 30% through improved efficiency and system architecture enhancements [5].

Group 1 - The company InnoPhase (02577) has announced a partnership with global AI technology leader NVIDIA to promote the large-scale implementation of the 800 VDC (800-volt direct current) power architecture in AI data centers [1] - The 800 VDC architecture is specifically designed by NVIDIA for future efficient power supply megawatt-level computing infrastructure, offering significant advantages in system efficiency, thermal loss, and reliability compared to traditional 54V power systems [1] - The company's third-generation GaN devices provide an excellent high-frequency, high-efficiency, and high-power density solution, supporting a full-link gallium nitride power solution from 800V input to GPU terminals, covering 15V to 1200V [1] Group 2 - The integration of GaN technology with NVIDIA's 800 VDC power architecture is expected to enable AI data centers to achieve a leap from kilowatt-level to megawatt-level in the coming years, ushering in a more efficient, reliable, and environmentally friendly era of AI computing [1]

Core Viewpoint - InnoLux Technology (02577) experienced a significant stock price surge, reaching a new high of 72 HKD, driven by its inclusion as the only Chinese chip company in NVIDIA's updated list of 800V DC power architecture partners [1][1]. Company Summary - InnoLux is the first IDM manufacturer globally to achieve mass production of 8-inch GaN wafers, focusing on the research, manufacturing, and sales of GaN power devices [1][1]. - The company specializes in a full voltage spectrum of GaN power semiconductors, covering 15V to 1200V, with a focus on the 15V-900V product line [1][1]. - InnoLux holds a 42.4% market share in global GaN discrete device shipments as of 2023, ranking first in the industry [1][1]. - The company's monthly production capacity is set to reach 13,000 pieces by the end of 2024, with plans to increase capacity to 70,000 pieces over the next five years [1][1]. Industry Context - The collaboration with NVIDIA is currently in the testing phase and has not yet resulted in substantial orders, indicating potential future growth opportunities [1][1]. - InnoLux's focus on key application areas such as consumer electronics, data centers, new energy vehicles, and industrial power supplies positions it well within the growing GaN semiconductor market [1][1].

华创证券指出，英诺赛科是全球首家实现8英寸氮化镓晶圆量产的IDM厂商，专注于GaN功率器件研 发、制造与销售。作为全球唯一覆盖15V-1200V全电压谱系的氮化镓功率半导体供应商，公司聚焦15V- 900V全电压产品线，覆盖消费电子、数据中心、新能源车及工业电源等核心场景，2023年以42.4%市占 率位居全球GaN分立器件出货量第一，截至24年末月产能达1.3万片，并计划未来五年内将产能提升至7 万片。 智通财经APP获悉，英诺赛科(02577)午前股价放量飙升，午后一度涨超63%，高见72港元创上市新高。 截至发稿，涨31.36%，报57.8港元，成交额41.15亿港元。 消息面上，英伟达官网更新800V直流电源架构合作商名录，英诺赛科是本次入选英伟达合作伙伴中唯 一的中国芯片企业。据21财经报道，对于合作细节，英诺赛科向以投资者身份采访的记者表示，与英伟 达的合作已有一段时间，公司主要凭借大功率氮化镓技术入围。不过，目前合作尚处于测试阶段，暂未 产生实质性订单。因公司正处于半年报发布阶段，不便对此次合作前景与影响作出回应。 ...